Samsung electronics co., ltd. (20240107779). INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240107779 titled 'INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The integrated circuit device described in the abstract includes a channel structure with a core insulating layer, a resistance change layer, a channel layer, and a pad pattern. The resistance change layer is in contact with the core insulating layer and spaced apart from the pad pattern.
- Conductive lines on a semiconductor substrate
- Insulating layers alternating with conductive lines
- Channel structure with core insulating layer, resistance change layer, channel layer, and pad pattern
Potential Applications
This technology could be applied in the development of advanced memory devices, such as resistive random-access memory (RRAM) or non-volatile memory.
Problems Solved
This technology provides a more efficient and compact way to integrate memory components within an integrated circuit, improving overall performance and reducing power consumption.
Benefits
- Enhanced memory storage capabilities - Improved circuit efficiency - Reduced power consumption
Potential Commercial Applications
"Advanced Memory Integration in Integrated Circuits"
Possible Prior Art
One possible prior art could be the development of similar memory integration techniques in integrated circuits, such as the use of resistance change layers in memory devices.
Unanswered Questions
How does this technology compare to existing memory integration methods?
This article does not provide a direct comparison with other memory integration techniques, leaving room for further analysis on the advantages and disadvantages of this approach.
What are the specific performance improvements achieved with this technology?
The article does not specify the exact performance enhancements resulting from the integration of the described channel structure, leaving the reader to wonder about the quantitative benefits of this innovation.
Original Abstract Submitted
an integrated circuit device includes a plurality of conductive lines extending on a semiconductor substrate in a horizontal direction and overlapping each other in a vertical direction, a plurality of insulating layers alternating with the plurality of conductive lines and extending in the horizontal direction, and a channel structure extending through the plurality of conductive lines and the plurality of insulating layers. the channel structure includes a core insulating layer, a resistance change layer on a side wall and a bottom surface of the core insulating layer, a channel layer on an outside wall of the resistance change layer, and a pad pattern on a top surface of the core insulating layer. a topmost surface of the resistance change layer is in contact with the core insulating layer and is spaced apart from a bottommost surface of the pad pattern.
