Samsung electronics co., ltd. (20240107778). PHASE-CHANGE MEMORY STRUCTURE AND PHASE-CHANGE MEMORY DEVICE INCLUDING THE SAME simplified abstract
Contents
- 1 PHASE-CHANGE MEMORY STRUCTURE AND PHASE-CHANGE MEMORY DEVICE INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PHASE-CHANGE MEMORY STRUCTURE AND PHASE-CHANGE MEMORY DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
PHASE-CHANGE MEMORY STRUCTURE AND PHASE-CHANGE MEMORY DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Changseung Lee of Suwon-si (KR)
Youngjae Kang of Suwon-si (KR)
PHASE-CHANGE MEMORY STRUCTURE AND PHASE-CHANGE MEMORY DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240107778 titled 'PHASE-CHANGE MEMORY STRUCTURE AND PHASE-CHANGE MEMORY DEVICE INCLUDING THE SAME
Simplified Explanation
The patent application describes a phase-change memory structure with multiple phase-change layers and barrier layers between them.
- Lower and upper electrodes are spaced apart.
- Phase-change material stack includes multiple phase-change layers.
- At least two phase-change layers have different phase-change temperatures.
- Multiple barrier layers are present between the phase-change layers.
- The at least two phase-change layers have different thicknesses.
Potential Applications
This technology could be applied in:
- Non-volatile memory devices
- High-speed data storage systems
Problems Solved
This technology addresses:
- Improving data storage density
- Enhancing memory device performance
Benefits
The benefits of this technology include:
- Increased data storage capacity
- Faster data access speeds
- Enhanced reliability of memory devices
Potential Commercial Applications
"Phase-Change Memory Structure with Multiple Phase-Change Layers" could be utilized in:
- Solid-state drives (SSDs)
- Wearable technology devices
Possible Prior Art
One example of prior art in this field is the use of multiple phase-change layers in memory devices to improve performance and reliability.
Unanswered Questions
How does this technology compare to traditional memory structures?
This article does not provide a direct comparison between this technology and traditional memory structures in terms of performance, cost, or other factors.
What are the potential challenges in scaling up this technology for mass production?
The article does not address the potential challenges that may arise when scaling up this technology for commercial production, such as manufacturing costs or process complexity.
Original Abstract Submitted
a phase-change memory structure includes lower and upper electrodes spaced apart from each other, and a phase-change material stack between the lower and upper electrodes. the phase-change material stack includes a plurality of phase-change layers, at least two phase-change layers of the plurality of phase-change layers have different phase-change temperatures, and a plurality of barrier layers between the plurality of phase-change layers the at least two phase-change layers of the plurality of phase-change layers have different thicknesses.
