Samsung electronics co., ltd. (20240107770). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Sung Su Moon of Hwaseong-si (KR)
Jae Duk Lee of Seongnam-si (KR)
Ik-Hyung Joo of Seongnam-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240107770 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes a unique structure with stacked components and contact plugs for electrical connections. Here are the key points explained in bullet form:
- The device has a first stacked structure with a first staircase portion.
- A second stacked structure is placed on top of the first structure, with a second staircase portion overlapping the first one.
- There are two contact plugs, one penetrating both stacked structures and connected to the first structure, and the other penetrating both structures and connected to the second structure.
Potential Applications
The technology described in this patent application could be applied in various electronic devices that require high-density memory storage, such as smartphones, tablets, and computers.
Problems Solved
This innovation solves the problem of increasing memory capacity in a limited space by utilizing a stacked structure with overlapping staircase portions and contact plugs for efficient electrical connections.
Benefits
The benefits of this technology include increased memory capacity, improved data storage efficiency, and potentially reduced manufacturing costs due to the innovative design of the stacked structures and contact plugs.
Potential Commercial Applications
A potential commercial application of this technology could be in the production of high-performance solid-state drives (SSDs) for consumer electronics, data centers, and other storage-intensive applications.
Possible Prior Art
One possible prior art related to this technology could be the use of stacked structures in semiconductor devices for memory storage, but the specific design with overlapping staircase portions and contact plugs as described in this patent application may be a novel approach.
Unanswered Questions
How does this technology compare to existing memory storage solutions on the market?
This article does not provide a direct comparison between this technology and other memory storage solutions currently available. A comparative analysis of performance, cost, and efficiency would be helpful for understanding the competitive advantages of this innovation.
What are the potential challenges or limitations of implementing this technology in practical applications?
The article does not address any potential challenges or limitations that may arise when implementing this technology in real-world devices. Exploring factors such as scalability, compatibility, and reliability could provide valuable insights into the feasibility of mass production and commercialization.
Original Abstract Submitted
a semiconductor memory device includes; a first stacked structure including a first staircase portion, a second stacked structure on the first stacked structure and including a second staircase portion overlapping the first staircase portion, a first contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the first stacked structure and not electrically connected to the second stacked structure, and a second contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the second stacked structure and not electrically connected to the first stacked structure.
