Samsung electronics co., ltd. (20240107767). SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Junhyoung Kim of Suwon-si (KR)
Joonyoung Kwon of Suwon-si (KR)
SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240107767 titled 'SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a gate electrode structure, a first division pattern, and a memory channel structure. The gate electrode structure consists of gate electrodes stacked in a first direction and extending in a second direction. The first division pattern extends through the gate electrode structure in the second direction, dividing it in a third direction. The memory channel structure extends through the gate electrode structure and includes a channel and a charge storage structure. The first division pattern has first and second sidewalls opposite to each other in the third direction, with spaced-apart first and second recesses on each sidewall in the second direction that do not overlap in the third direction.
- Gate electrode structure with stacked electrodes
- First division pattern dividing the gate electrode structure
- Memory channel structure with channel and charge storage structure
- First and second sidewalls with spaced-apart recesses
- Recesses on each sidewall that do not overlap
Potential Applications
This technology could be applied in:
- Memory devices
- Semiconductor manufacturing
- Integrated circuits
Problems Solved
This technology helps in:
- Enhancing memory storage capacity
- Improving semiconductor device performance
- Increasing data processing speed
Benefits
The benefits of this technology include:
- Higher memory density
- Improved device efficiency
- Faster data access and retrieval
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Data storage devices
- Communication systems
Possible Prior Art
One possible prior art for this technology could be:
- Previous semiconductor device designs with similar gate electrode structures and memory channel configurations
Unanswered Questions
How does this technology impact power consumption in semiconductor devices?
This article does not address the specific impact of this technology on power consumption in semiconductor devices.
What are the potential challenges in scaling up this technology for mass production?
This article does not discuss the potential challenges in scaling up this technology for mass production.
Original Abstract Submitted
a semiconductor device includes a gate electrode structure, a first division pattern, and a memory channel structure. the gate electrode structure includes gate electrodes stacked in a first direction and extending in a second direction. the first division pattern extends in the second direction through the gate electrode structure, and divides the gate electrode structure in a third direction. the memory channel structure extends through the gate electrode structure, and includes a channel and a charge storage structure. the first division pattern includes first and second sidewalls opposite to each other in the third direction. first recesses are spaced apart from each other in the second direction on the first sidewall, and second recesses are spaced apart from each other in the second direction on the second sidewall. the first and second recesses do not overlap in the third direction.
