Samsung electronics co., ltd. (20240107763). SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Organization Name
Inventor(s)
Sunghee Chung of Suwon-si (KR)
Hyeongjin Kim of Suwon-si (KR)
Joongshik Shin of Suwon-si (KR)
SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240107763 titled 'SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a source structure with multiple horizontal conductive layers, gate electrodes, a channel structure, and a separation region. The first horizontal conductive layer extends below the separation region and overlaps it in a specific direction.
- Source structure with plate layer and stacked horizontal conductive layers
- Gate electrodes stacked and spaced apart in a specific direction
- Channel structure with channel layer in contact with the first horizontal conductive layer
- Separation region extending in two directions and overlapping the first horizontal conductive layer
Potential Applications
This technology could be applied in:
- High-performance electronic devices
- Power management systems
- Communication devices
Problems Solved
This technology helps in:
- Enhancing device performance
- Improving power efficiency
- Increasing data transmission speeds
Benefits
The benefits of this technology include:
- Higher device efficiency
- Improved reliability
- Enhanced overall performance
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Semiconductor manufacturing industry
- Electronics and consumer goods sector
- Telecommunications and networking companies
Possible Prior Art
One possible prior art for this technology could be:
- Semiconductor devices with similar horizontal conductive layers and gate structures
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor devices in terms of performance and efficiency. Further research and testing would be needed to determine the specific advantages of this technology over existing solutions.
What are the specific manufacturing processes involved in creating this semiconductor device?
The article does not detail the specific manufacturing processes involved in creating this semiconductor device. Understanding the manufacturing processes could provide insights into the scalability and cost-effectiveness of implementing this technology.
Original Abstract Submitted
a semiconductor device includes a source structure including a plate layer and first and second horizontal conductive layers stacked in order on the plate layer, gate electrodes stacked and spaced apart from each other in a first direction perpendicular to an upper surface of the source structure, a channel structure penetrating through the gate electrodes, extending in the first direction, and including a channel layer in contact with the first horizontal conductive layer, and a separation region penetrating through the gate electrodes and extending in the first direction and in a second direction perpendicular to the first direction, wherein the first horizontal conductive layer extends horizontally below the separation region and has a seam overlapping the separation region in the first direction.
