Samsung electronics co., ltd. (20240107751). SEMICONDUCTOR MEMORY DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICE
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Sang Hoon Min of Suwon-si (KR)
Choong Hyun Lee of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240107751 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The semiconductor memory device described in the abstract includes a unique structure with different thicknesses of cell conductive layers in different regions of the device. This design allows for improved performance and efficiency in memory storage and retrieval.
- The device comprises a substrate with a cell region, a peripheral region, and a boundary region between the two.
- It includes a word line structure and a bit line structure on the substrate.
- The bit line structure consists of first and second cell conductive layers, with the second layer being thicker in the boundary region.
- A bit line contact connects the substrate with the bit line structure.
Potential Applications
The technology described in this patent application could be applied in various semiconductor memory devices, such as DRAM, SRAM, and flash memory.
Problems Solved
This innovation addresses the challenge of optimizing memory storage and retrieval efficiency in semiconductor devices by introducing a novel structure with varying thicknesses of cell conductive layers.
Benefits
The benefits of this technology include improved performance, increased efficiency, and enhanced reliability in semiconductor memory devices.
Potential Commercial Applications
The technology could find commercial applications in the manufacturing of advanced semiconductor memory devices for various electronic products, such as smartphones, computers, and data storage systems.
Possible Prior Art
One possible prior art in semiconductor memory devices is the use of multi-level cell (MLC) technology to increase storage capacity and density.
What is the manufacturing process for this semiconductor memory device?
The manufacturing process for this semiconductor memory device involves creating the substrate with the cell, peripheral, and boundary regions, depositing the cell conductive layers, forming the word line and bit line structures, and connecting the bit line structure with the substrate through the bit line contact.
How does the varying thickness of the cell conductive layers impact the performance of the memory device?
The varying thickness of the cell conductive layers in different regions of the device can affect the resistance and capacitance characteristics, which in turn can influence the speed, power consumption, and reliability of the memory device.
Original Abstract Submitted
a semiconductor memory device is provided. the semiconductor memory device comprises a substrate including a cell region having an active region defined by a cell element isolation layer, a peripheral region near the cell region, and a boundary region between the cell region and the peripheral region. the device includes a word line structure in the substrate and extending in a first direction, a bit line structure on the substrate extending from the cell region to the boundary region in a second direction that crosses the first direction, including first and second cell conductive layers sequentially stacked on the substrate, and a bit line contact between the substrate and the bit line structure and connecting the substrate with the bit line structure. the second cell conductive layer in the boundary region is thicker than the second cell conductive layer in the cell region.
