Samsung electronics co., ltd. (20240105856). ELECTROSTATIC DISCHARGE DEVICE AND DISPLAY DRIVE CHIP INCLUDING THE SAME simplified abstract
Contents
- 1 ELECTROSTATIC DISCHARGE DEVICE AND DISPLAY DRIVE CHIP INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ELECTROSTATIC DISCHARGE DEVICE AND DISPLAY DRIVE CHIP INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
ELECTROSTATIC DISCHARGE DEVICE AND DISPLAY DRIVE CHIP INCLUDING THE SAME
Organization Name
Inventor(s)
Changsig Kang of Suwon-si (KR)
ELECTROSTATIC DISCHARGE DEVICE AND DISPLAY DRIVE CHIP INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105856 titled 'ELECTROSTATIC DISCHARGE DEVICE AND DISPLAY DRIVE CHIP INCLUDING THE SAME
Simplified Explanation
The abstract describes an electrostatic discharge (ESD) device with specific features including impurity regions, silicide layers, and conductivity types within a semiconductor substrate.
- The device includes a semiconductor substrate with a base well.
- It has a first region with a first impurity region of a first conductivity type within the base well.
- There is a second region with a second impurity region of a second conductivity type in the base well, separate from the first region.
- A first silicide layer partially overlaps the first impurity region vertically.
- A second silicide layer on the second impurity region, separate from the first silicide layer horizontally, and partially overlaps the second impurity region vertically.
- The second conductivity type is opposite the first conductivity type.
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Semiconductor manufacturing
- Electronics industry
- ESD protection devices
Problems Solved
This technology helps address the following issues:
- Electrostatic discharge damage in electronic devices
- Improving the reliability of semiconductor components
Benefits
The benefits of this technology include:
- Enhanced ESD protection
- Improved performance of electronic devices
- Increased reliability of semiconductor products
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- ESD protection devices for consumer electronics
- Semiconductor components for industrial applications
Possible Prior Art
One possible prior art related to this technology could be the use of silicide layers in semiconductor devices for improving conductivity and performance.
Unanswered Questions
How does this technology compare to existing ESD protection devices on the market?
This article does not provide a direct comparison with existing ESD protection devices in terms of performance, cost, or other factors.
What are the specific manufacturing processes involved in creating this ESD device?
The article does not delve into the detailed manufacturing processes required to produce this specific ESD device.
Original Abstract Submitted
an electrostatic discharge (esd) device may include a semiconductor substrate, a base well in the semiconductor substrate, a first region including a first impurity region having a first conductivity type within the base well, a second region apart from the first region in a horizontal direction in the base well and including a second impurity region having a second conductivity type a first silicide layer at least partially overlapping the first impurity region in a vertical direction on the first impurity region, and a second silicide layer on the second impurity region and apart from the first silicide layer in the horizontal direction. the second silicide layer may at least partially overlap the second impurity region in the vertical direction. the second conductivity type may be opposite the first conductivity type.
