Samsung electronics co., ltd. (20240105255). SEMICONDUCTOR MEMORY DEVICES HAVING ADJUSTABLE I/O SIGNAL LINE LOADING THAT SUPPORTS REDUCED POWER CONSUMPTION DURING READ AND WRITE OPERATIONS simplified abstract
Contents
- 1 SEMICONDUCTOR MEMORY DEVICES HAVING ADJUSTABLE I/O SIGNAL LINE LOADING THAT SUPPORTS REDUCED POWER CONSUMPTION DURING READ AND WRITE OPERATIONS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICES HAVING ADJUSTABLE I/O SIGNAL LINE LOADING THAT SUPPORTS REDUCED POWER CONSUMPTION DURING READ AND WRITE OPERATIONS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICES HAVING ADJUSTABLE I/O SIGNAL LINE LOADING THAT SUPPORTS REDUCED POWER CONSUMPTION DURING READ AND WRITE OPERATIONS
Organization Name
Inventor(s)
Seung-Jun Lee of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICES HAVING ADJUSTABLE I/O SIGNAL LINE LOADING THAT SUPPORTS REDUCED POWER CONSUMPTION DURING READ AND WRITE OPERATIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105255 titled 'SEMICONDUCTOR MEMORY DEVICES HAVING ADJUSTABLE I/O SIGNAL LINE LOADING THAT SUPPORTS REDUCED POWER CONSUMPTION DURING READ AND WRITE OPERATIONS
Simplified Explanation
The semiconductor memory device described in the abstract includes a memory bank divided into split regions with memory cell sub-arrays, global input/output split lines, connection control transistors, a sense amplifier, and a control circuit to reduce power consumption during read and write operations.
- Memory bank divided into split regions with memory cell sub-arrays
- Global input/output split lines connected to split regions
- Connection control transistors to short specific split lines together
- GIO sense amplifier connected to memory bank
- Control circuit to reduce power consumption during read and write operations
Potential Applications
The technology described in this patent application could be applied in various memory devices such as RAM, flash memory, and solid-state drives.
Problems Solved
This technology helps reduce power consumption in memory devices during read and write operations, improving overall energy efficiency.
Benefits
The benefits of this technology include lower power consumption, improved energy efficiency, and potentially longer battery life in devices utilizing this memory technology.
Potential Commercial Applications
- Energy-efficient memory devices for mobile phones and laptops
- High-performance memory solutions for data centers and servers
Possible Prior Art
One possible prior art for this technology could be memory devices with similar power-saving features, such as low-power RAM modules or energy-efficient flash memory solutions.
Unanswered Questions
How does this technology compare to existing power-saving techniques in memory devices?
This article does not provide a direct comparison with existing power-saving techniques in memory devices.
What are the specific technical specifications of the memory cells and sub-arrays used in this technology?
The article does not delve into the specific technical specifications of the memory cells and sub-arrays used in this technology.
Original Abstract Submitted
a semiconductor memory device includes a memory bank arranged into first through nth split regions containing at least one memory cell sub-array within each split region, and first through nth global input/output (gio) split lines electrically coupled to the first through nth split regions. first through n-lth connection control transistors are provided, which have gate terminals responsive to respective connection control signals. the first connection control transistor is configured to electrically short the first and second gio split lines together when enabled by a corresponding connection control signal, and the n-1th connection control transistor is configured to electrically short the n-1th and nth gio split lines together when enabled by a corresponding connection control signal. a gio sense amplifier is provided, which is electrically coupled to the memory bank. a control circuit is provided, which is configured to reduce i/o signal line power consumption within the memory device during read (and write) operations.
