Samsung electronics co., ltd. (20240105254). SENSE AMPLIFIER, OPERATING METHOD THEREOF, AND VOLATILE MEMORY DEVICE INCLUDING THE SAME simplified abstract
Contents
- 1 SENSE AMPLIFIER, OPERATING METHOD THEREOF, AND VOLATILE MEMORY DEVICE INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SENSE AMPLIFIER, OPERATING METHOD THEREOF, AND VOLATILE MEMORY DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SENSE AMPLIFIER, OPERATING METHOD THEREOF, AND VOLATILE MEMORY DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Duckyoung Seo of Suwon-si (KR)
SENSE AMPLIFIER, OPERATING METHOD THEREOF, AND VOLATILE MEMORY DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105254 titled 'SENSE AMPLIFIER, OPERATING METHOD THEREOF, AND VOLATILE MEMORY DEVICE INCLUDING THE SAME
Simplified Explanation
The sense amplifier described in the patent application includes a sense amplification circuit and a sensitivity control circuit. The sense amplification circuit pre-charges the bit lines, compensates for an offset, and senses the target data based on a change in voltage level. The sensitivity control circuit adjusts the sensing sensitivity for the target data by increasing the current flowing through the first MOS transistor.
- The sense amplifier includes a sense amplification circuit and a sensitivity control circuit.
- The sense amplification circuit pre-charges the bit lines and compensates for an offset.
- The sensitivity control circuit adjusts the sensing sensitivity by increasing the current flowing through the first MOS transistor.
Potential Applications
This technology could be applied in:
- Memory devices
- Data storage systems
- Integrated circuits
Problems Solved
- Improved sensing accuracy
- Enhanced data retrieval speed
- Reduced power consumption
Benefits
- Increased data accuracy
- Faster data retrieval
- Energy-efficient operation
Potential Commercial Applications
Optimizing Sensing Sensitivity in Memory Devices
Possible Prior Art
Prior art related to sense amplifiers in memory devices and integrated circuits.
Unanswered Questions
How does this technology compare to existing sense amplifiers in terms of performance and efficiency?
The patent application does not provide a direct comparison with existing sense amplifiers.
Are there any specific limitations or drawbacks of this technology that need to be addressed?
The patent application does not mention any limitations or drawbacks of the technology.
Original Abstract Submitted
disclosed is a sense amplifier which includes a sense amplification circuit and a sensitivity control circuit. the sense amplification circuit includes first and second mos transistors. the first mos transistor is connected with a first bit line and a target memory cell. the second mos transistor is connected with a second bit line and a non-target memory cell. the sense amplification circuit pre-charges the first and second bit lines with a first driving voltage, compensates for an offset, and senses the target data based on a change in a voltage level of the first bit line, after charge sharing between the target memory cell and the first bit line. the sensitivity control circuit adjusts the sensing sensitivity for the target data indicating a first logical value by increasing a magnitude of a current flowing through the first mos transistor while the sense amplification circuit senses the target data.
