Samsung electronics co., ltd. (20240099161). JOSEPHSON JUNCTION DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
- 1 JOSEPHSON JUNCTION DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 JOSEPHSON JUNCTION DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
JOSEPHSON JUNCTION DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Jaehyeong Lee of Suwon-si (KR)
Jinhyoun Kang of Suwon-si (KR)
JOSEPHSON JUNCTION DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099161 titled 'JOSEPHSON JUNCTION DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a Josephson junction device and a method of manufacturing it, which includes a substrate with a trench, superconducting electrodes, a tunneling thin film, and a superconducting tunnel junction.
- Substrate with trench:
- The device includes a substrate with a trench recessed below the top surface. - Sidewalls of the substrate define the sidewalls of the trench.
- Superconducting electrodes:
- A first superconducting electrode is formed on the top surface of the substrate, with sidewalls defining the trench. - A second superconducting electrode is formed in the trench, in contact with the tunneling thin film.
- Tunneling thin film:
- The tunneling thin film is formed over the sidewalls of the substrate and the first superconducting electrode.
- Superconducting tunnel junction:
- A superconducting tunnel junction is formed between the first and second superconducting electrodes through the tunneling thin film.
Potential Applications
The Josephson junction device can be used in superconducting electronics, quantum computing, and high-speed signal processing applications.
Problems Solved
This technology solves the problem of creating a reliable and efficient superconducting tunnel junction for various electronic applications.
Benefits
The device offers high-speed operation, low power consumption, and high sensitivity, making it suitable for advanced electronic systems.
Potential Commercial Applications
Potential commercial applications include superconducting quantum computers, ultra-sensitive detectors, and high-speed communication devices.
Possible Prior Art
Prior art may include previous methods of manufacturing Josephson junction devices, such as different approaches to forming superconducting tunnel junctions.
Unanswered Questions
What materials are used in the tunneling thin film?
The abstract does not specify the materials used in the tunneling thin film. This information would be crucial for understanding the performance and characteristics of the device.
How is the superconducting tunnel junction tested for reliability?
The abstract does not mention how the reliability of the superconducting tunnel junction is tested. Understanding the testing methods would be important for assessing the device's overall quality and performance.
Original Abstract Submitted
a josephson junction device and a method of manufacturing the josephson junction device are disclosed. the josephson junction device includes a substrate having a top surface and a trench recessed below the first surface, wherein sidewalls of the substrate define sidewalls of the trench; a first superconducting electrode formed on the top surface of the substrate with sidewalls further defining the sidewalls of the trench; a tunneling thin film formed over the sidewalls of the substrate and over the sidewalls of the first superconducting electrode; and a second superconducting electrode formed in the trench in contact with the tunneling thin film and with top surface above the top surface of the substrate, wherein a superconducting tunnel junction is formed between the first superconducting electrode and the second superconducting electrode through the tunneling thin film.
