Samsung electronics co., ltd. (20240099015). SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kyunghwan Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099015 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with stacked horizontal structures and vertical structures. Each vertical structure consists of a vertical source line, a vertical bit line, a channel layer, and a dielectric layer. The horizontal structures include a first conductive layer, a ferroelectric layer, and a second conductive layer.
- Explanation of the patent:
* The patent describes a semiconductor device with a unique structure that allows for efficient data storage and retrieval. * The vertical structures enable vertical integration of components, optimizing space and performance. * The use of a ferroelectric layer in the horizontal structures enhances data retention and reduces power consumption.
Potential Applications
The technology described in the patent could be applied in:
- Memory devices
- Data storage systems
- Integrated circuits
Problems Solved
The semiconductor device addresses the following issues:
- Limited space for component integration
- Data retention and power consumption in memory devices
- Efficiency and performance of integrated circuits
Benefits
The benefits of this technology include:
- Improved data storage capacity
- Enhanced data retention and reduced power consumption
- Increased efficiency and performance of semiconductor devices
Potential Commercial Applications
The technology has potential applications in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art could be the use of ferroelectric materials in memory devices to improve data retention and reduce power consumption.
Unanswered Questions
How does this technology compare to existing memory storage solutions in terms of speed and reliability?
The article does not provide a direct comparison with existing memory storage solutions in terms of speed and reliability. Further research and testing would be needed to determine the performance of this technology in comparison to existing solutions.
What are the potential challenges in scaling up the production of semiconductor devices using this technology for mass commercial use?
The article does not address the potential challenges in scaling up production for mass commercial use. Factors such as cost, manufacturing processes, and market demand would need to be considered to assess the feasibility of large-scale production.
Original Abstract Submitted
a semiconductor device includes a substrate. a plurality of horizontal structures is stacked on the substrate and spaced apart from each other. a plurality of vertical structures penetrates through the plurality of horizontal structures. each of the plurality of vertical structures includes a vertical source line, a vertical bit line, a channel layer, and a dielectric layer. the channel layer is in direct contact with the vertical source line and the vertical bit line. the dielectric layer is disposed between the plurality of horizontal structures and the channel layer. each of the plurality of horizontal structures includes a first conductive layer, a ferroelectric layer surrounding at least a portion of the first conductive layer, and a second conductive layer disposed between the ferroelectric layer and the dielectric layer.
