Samsung electronics co., ltd. (20240098996). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract
Contents
- 1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing three-dimensional memory devices in terms of performance and reliability?
- 1.11 What are the potential challenges in scaling up the production of this technology for mass commercialization?
- 1.12 Original Abstract Submitted
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240098996 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The abstract describes a three-dimensional semiconductor memory device with a cell array structure that includes a stack, a source structure, and a vertical structure.
- The cell array structure consists of interlayer insulating layers and conductive patterns stacked alternately.
- The vertical structure includes a channel layer with vertical channel holes and a portion connected to the source structure.
- The vertical structure extends between the stack and the source structure, providing electrical connection.
Potential Applications
The technology described in this patent application could be applied in various memory devices, such as solid-state drives, smartphones, and other electronic devices requiring high-density memory storage.
Problems Solved
This technology solves the problem of increasing memory storage capacity in a limited space by utilizing a three-dimensional cell array structure.
Benefits
The benefits of this technology include higher memory storage capacity, improved performance, and potentially reduced power consumption compared to traditional memory devices.
Potential Commercial Applications
The potential commercial applications of this technology could include the production of advanced memory devices for consumer electronics, data centers, and other industries requiring high-performance memory solutions.
Possible Prior Art
One possible prior art for this technology could be the development of three-dimensional NAND flash memory, which also utilizes a stacked cell array structure for increased memory density.
Unanswered Questions
How does this technology compare to existing three-dimensional memory devices in terms of performance and reliability?
The article does not provide a direct comparison between this technology and existing three-dimensional memory devices in terms of performance and reliability.
What are the potential challenges in scaling up the production of this technology for mass commercialization?
The article does not address the potential challenges in scaling up the production of this technology for mass commercialization.
Original Abstract Submitted
a three-dimensional semiconductor memory device may include a substrate, a peripheral circuit structure on the substrate, and a cell array structure on the peripheral circuit structure. the cell array structure may include a stack that includes interlayer insulating layers and conductive patterns alternately stacked with one another, a source structure on the stack, and a vertical structure that extends in the stack and is electrically connected to a bottom surface of the source structure. the vertical structure may include a channel layer that includes first portions respectively in vertical channel holes extending in the stack, and a second portion that extends in a region between the stack and the source structure and is electrically connected to the first portions.
