Samsung electronics co., ltd. (20240098987). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

samsung electronics co., ltd.

Inventor(s)

Junhyeok Ahn of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240098987 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The semiconductor device described in the abstract includes a substrate with a cell array area and a peripheral circuit area, multiple first active areas in the cell array area, at least one second active area in the peripheral circuit area, several bit lines in the substrate, cell pad structures with multiple layers, and a peripheral circuit gate electrode with sequential layers on the second active area.

  • The semiconductor device has a substrate divided into different areas for cell arrays and peripheral circuits.
  • It includes multiple active areas for processing data and signals.
  • The device features bit lines for data transmission within the substrate.
  • Cell pad structures are designed with specific layers for connectivity and functionality.
  • The peripheral circuit gate electrode is strategically placed on the substrate for circuit control.

Potential Applications

The technology described in this semiconductor device patent application could be applied in:

  • Memory devices
  • Microprocessors
  • Integrated circuits

Problems Solved

This technology addresses issues related to:

  • Efficient data processing in semiconductor devices
  • Enhanced connectivity and functionality in integrated circuits

Benefits

The semiconductor device offers benefits such as:

  • Improved performance in data processing
  • Enhanced reliability in circuit connectivity

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Consumer electronics
  • Telecommunications
  • Automotive industry

Possible Prior Art

One possible prior art for this technology could be the development of multi-layered semiconductor devices with specific areas for different functions.

Unanswered Questions

How does this technology impact energy efficiency in semiconductor devices?

This article does not provide information on the energy efficiency implications of the described semiconductor device technology.

What are the potential scalability limitations of this technology for mass production?

The article does not address the scalability limitations that may arise when implementing this technology for mass production of semiconductor devices.


Original Abstract Submitted

a semiconductor device includes a substrate having a cell array area and a peripheral circuit area, a plurality of first active areas defined in the cell array area and at least one second active area defined in the peripheral circuit area, a plurality of bit lines disposed in the substrate, a plurality of cell pad structures including a first conductive layer, a first intermediate layer, and a first metal layer having a first height from an upper surface of the first intermediate layer, and a peripheral circuit gate electrode disposed on the peripheral circuit area of the substrate and including a second conductive layer, a second intermediate layer, and a second metal layer having a second height from an upper surface of the second intermediate layer sequentially disposed on the at least one second active area, the second height being less than the first height.