Samsung electronics co., ltd. (20240098986). METHOD OF FORMING CONTACT INCLUDED IN SEMICONDUCTOR DEVICE simplified abstract
Contents
- 1 METHOD OF FORMING CONTACT INCLUDED IN SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF FORMING CONTACT INCLUDED IN SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD OF FORMING CONTACT INCLUDED IN SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Suncheul Kim of Hwaseong-si (KR)
Donghyun Lee of Gwacheon-si (KR)
Uihyoung Lee of Hwaseong-si (KR)
METHOD OF FORMING CONTACT INCLUDED IN SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240098986 titled 'METHOD OF FORMING CONTACT INCLUDED IN SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method for forming a contact on a semiconductor substrate using plasma nitrification treatment and a source gas containing ticland honto.
- Semiconductor substrate with silicon oxide film is placed in a chamber.
- Surface of silicon oxide film is treated with plasma nitrification.
- Source gas containing ticland honto is supplied to the treated film.
- Barrier layer is formed by igniting plasma using the source gas.
Potential Applications
This technology can be applied in the semiconductor industry for manufacturing electronic devices.
Problems Solved
This method solves the problem of forming reliable contacts on semiconductor substrates.
Benefits
The method provides a reliable and efficient way to form contacts on semiconductor substrates, improving device performance.
Potential Commercial Applications
- "Innovative Method for Semiconductor Contact Formation: Improving Device Performance"
Possible Prior Art
There may be prior art related to plasma treatment of semiconductor substrates for contact formation, but specific examples are not provided in the patent application.
Unanswered Questions
What are the specific parameters for the plasma nitrification treatment mentioned in the method?
The patent application does not provide detailed information on the exact parameters used for the plasma nitrification treatment.
How does the barrier layer formed using this method compare to traditional barrier layers in terms of performance and reliability?
The application does not compare the barrier layer formed using this method to traditional barrier layers, leaving a gap in understanding the potential advantages of this innovation.
Original Abstract Submitted
a contact forming method may include providing a semiconductor substrate including a silicon oxide film to an interior of a chamber, subjecting a surface of the silicon oxide film to plasma nitrification treatment, supplying a source gas including ticland honto the silicon oxide film subjected to the plasma nitrification treatment, and forming a barrier layer by igniting a plasma using the source gas.
