Samsung electronics co., ltd. (20240098964). SEMICONDUCTOR DEVICES simplified abstract

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SEMICONDUCTOR DEVICES

Organization Name

samsung electronics co., ltd.

Inventor(s)

Jihee Jun of Suwon-si (KR)

Injae Bae of Suwon-si (KR)

Jihoon Chang of Suwon-si (KR)

Dongsik Park of Suwon-si (KR)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240098964 titled 'SEMICONDUCTOR DEVICES

Simplified Explanation

The semiconductor device described in the abstract includes a structure with multiple bit lines, contact plugs, and wiring layers stacked in different directions to connect various components on the substrate.

  • The semiconductor device features a complex arrangement of bit lines, contact plugs, and wiring layers to optimize the connection between the components on the substrate.
  • The device includes a gate electrode, gate insulation pattern, channel, upper contact plug, and capacitor, along with the mentioned bit lines and contact plugs.
  • The first and second lower wirings are at different levels from each other, indicating a multi-layered wiring structure within the device.

Potential Applications

The technology described in this patent application could be applied in various semiconductor devices such as memory chips, processors, and integrated circuits.

Problems Solved

This innovation solves the problem of optimizing the connection and signal transmission between different components in a semiconductor device, improving its overall performance and efficiency.

Benefits

The benefits of this technology include enhanced functionality, improved signal transmission, and increased reliability of the semiconductor device.

Potential Commercial Applications

The technology could be commercially applied in the production of advanced memory chips, processors, and other semiconductor devices for various electronic applications.

Possible Prior Art

One possible prior art for this technology could be the development of multi-layered wiring structures in semiconductor devices to improve signal transmission and connectivity.

Unanswered Questions

How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?

The article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and efficiency of this technology.

What are the specific manufacturing processes involved in creating the complex arrangement of bit lines, contact plugs, and wiring layers in this semiconductor device?

The article does not detail the specific manufacturing processes used to create the complex structure of the semiconductor device.


Original Abstract Submitted

a semiconductor device includes a s/a circuit, bit lines, a gate electrode, a gate insulation pattern, a channel, an upper contact plug and a capacitor on a substrate. the bit lines includes first, second, third and fourth bit lines sequentially arranged in the second direction. a first lower contact plug, a first lower wiring and a second lower contact plug are sequentially stacked in a third direction between the s/a circuit and the first bit line, and are electrically connected to the s/a circuit and the first bit line. a third lower contact plug, a second lower wiring and a fourth lower contact plug are sequentially stacked in the third direction between the s/a circuit and the third bit line, and are electrically connected to the s/a circuit and the third bit line. the first and second lower wirings are at different levels from each other.