Samsung electronics co., ltd. (20240097622). RF CIRCUIT FOR PREVENTING DAMAGE TO POWER AMPLIFIER simplified abstract

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RF CIRCUIT FOR PREVENTING DAMAGE TO POWER AMPLIFIER

Organization Name

samsung electronics co., ltd.

Inventor(s)

Yousung Lee of Gyeonggi-do (KR)

Dongil Yang of Gyeonggi-do (KR)

Yohan Moon of Gyeonggi-do (KR)

Hyoseok Na of Gyeonggi-do (KR)

Taeyoung Kim of Gyeonggi-do (KR)

RF CIRCUIT FOR PREVENTING DAMAGE TO POWER AMPLIFIER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240097622 titled 'RF CIRCUIT FOR PREVENTING DAMAGE TO POWER AMPLIFIER

Simplified Explanation

The abstract describes a radio frequency (RF) circuit that includes a power amplifier, a switching circuit, a first electrical path, and a first diode connected to the switching circuit.

  • The RF circuit includes a power amplifier that is connected to a switching circuit.
  • The switching circuit is designed to connect the power amplifier to a first switch or a terminating resistor based on the output voltage of the power amplifier.
  • A first electrical path is formed between the power amplifier and the switching circuit.
  • A first diode is connected to a second electrical path from a first point of the first electrical path to the switching circuit.

Potential Applications

The technology described in the patent application could be used in wireless communication systems, radar systems, and other RF applications where efficient power management is crucial.

Problems Solved

This technology solves the problem of efficiently managing power output in RF circuits by dynamically switching between different configurations based on the output voltage of the power amplifier.

Benefits

The benefits of this technology include improved power efficiency, reduced heat generation, and potentially longer lifespan of the RF circuit components.

Potential Commercial Applications

Potential commercial applications of this technology could include mobile devices, base stations, satellite communication systems, and other RF equipment where power efficiency is a key consideration.

Possible Prior Art

One possible prior art for this technology could be similar RF circuits with switching mechanisms based on output voltage levels, but the specific configuration and design of the circuit described in the patent application may be novel.

Unanswered Questions

How does this technology compare to existing power management solutions in RF circuits?

This article does not provide a direct comparison to existing power management solutions in RF circuits, so it is unclear how this technology differs or improves upon current methods.

What are the potential challenges in implementing this technology in practical RF systems?

The article does not address the potential challenges in implementing this technology in practical RF systems, such as integration with existing circuitry, calibration requirements, or potential interference issues.


Original Abstract Submitted

according to an embodiment, a radio frequency (rf) circuit comprises: a power amplifier; a switching circuit configured to electrically connect the power amplifier to a first switch in case that an output voltage of the power amplifier does not exceed a threshold voltage and to electrically connect the power amplifier to a terminating resistor in case that the output voltage of the power amplifier exceeds the threshold voltage; a first electrical path formed between the power amplifier and the switching circuit; and a first diode connected to a second electrical path formed from a first point of the first electrical path to the switching circuit, the first diode connected between the first point and the switching circuit.