Samsung electronics co., ltd. (20240096945). INTEGRATED CIRCUIT DEVICE simplified abstract
Contents
- 1 INTEGRATED CIRCUIT DEVICE
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Moonseung Yang of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096945 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The integrated circuit device described in the patent application includes a fin-type active region on a substrate, at least one nanosheet, a gate line on the fin-type active region, and a source/drain region on the fin-type active region adjacent to the gate line. The source/drain region consists of a lower main body layer and an upper main body layer, with specific surface features designed for optimal performance.
- Fin-type active region on a substrate
- Nanosheet with a bottom surface facing the fin top
- Gate line on the fin-type active region
- Source/drain region adjacent to the gate line, with lower and upper main body layers
- Lower main body layer with a lower facet declining toward the substrate
- Upper main body layer with a bottom surface contacting the lower facet and a top surface with an upper facet
Potential Applications
The technology described in this patent application could be applied in:
- Advanced semiconductor devices
- High-performance computing systems
- Next-generation mobile devices
Problems Solved
This technology addresses issues related to:
- Improving transistor performance
- Enhancing device efficiency
- Reducing power consumption in electronic devices
Benefits
The benefits of this technology include:
- Increased speed and efficiency of electronic devices
- Enhanced overall performance of integrated circuits
- Potential for smaller and more powerful devices
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Semiconductor manufacturing companies
- Electronics industry for consumer devices
- Research and development in nanotechnology
Possible Prior Art
One possible prior art related to this technology is the use of nanosheets in semiconductor devices to improve transistor performance. Researchers have been exploring various ways to enhance the efficiency of integrated circuits through innovative design and materials.
Unanswered Questions
How does this technology compare to existing transistor designs in terms of performance and efficiency?
This article does not provide a direct comparison with existing transistor designs to evaluate the performance and efficiency improvements offered by the new technology.
What are the potential challenges or limitations of implementing this technology in mass production of integrated circuits?
The article does not address the potential challenges or limitations that may arise during the mass production and commercialization of devices using this technology.
Original Abstract Submitted
an integrated circuit device includes a fin-type active region on a substrate; at least one nanosheet having a bottom surface facing the fin top; a gate line on the fin-type active region; and a source/drain region on the fin-type active region, adjacent to the gate line, and in contact with the at least one nanosheet, wherein the source/drain region includes a lower main body layer and an upper main body layer, a top surface of the lower main body layer includes a lower facet declining toward the substrate as it extends in a direction from the at least one nanosheet to a center of the source/drain region, and the upper main body layer includes a bottom surface contacting the lower facet and a top surface having an upper facet. with respect to a vertical cross section, the lower facet extends along a corresponding first line and the upper facet extends along a second line that intersects the first line.
