Samsung electronics co., ltd. (20240096944). POWER DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
- 1 POWER DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 POWER DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
POWER DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
POWER DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096944 titled 'POWER DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a power device with a compound semiconductor layer grown on a substrate, featuring a cooling space region for efficient heat dissipation.
- Compound semiconductor layer epitaxially grown on a substrate
- Gate, source, and drain components on the compound semiconductor layer
- Passivation layer covering the components
- Cooling space region within the substrate for heat dissipation
- Enlargement region within the cooling space for increased cooling efficiency
Potential Applications
The technology can be applied in various power electronics devices, such as high-power transistors, amplifiers, and voltage regulators.
Problems Solved
1. Heat dissipation: The cooling space region allows for efficient heat dissipation, preventing overheating of the power device. 2. Performance stability: By managing heat effectively, the power device can maintain stable performance over extended periods.
Benefits
1. Improved reliability: Enhanced heat dissipation ensures the longevity and reliability of the power device. 2. Energy efficiency: Efficient cooling mechanisms can lead to energy savings in power electronics applications.
Potential Commercial Applications
"Efficient Heat Dissipation in Power Devices: Applications and Benefits"
Possible Prior Art
There may be prior art related to power devices with cooling mechanisms, such as heat sinks or integrated cooling systems. However, the specific design of the cooling space region with an enlargement region may be a novel aspect of this patent application.
Unanswered Questions
How does this technology compare to existing cooling solutions in power devices?
The patent application does not provide a direct comparison with existing cooling solutions in power devices. It would be beneficial to understand the advantages and limitations of this technology in relation to traditional cooling methods.
What are the manufacturing challenges associated with implementing the cooling space region in power devices?
The patent application does not address the potential manufacturing challenges that may arise when incorporating the cooling space region in power devices. Understanding the complexities and requirements of manufacturing this technology could provide valuable insights into its feasibility and scalability.
Original Abstract Submitted
provided are a power device and a manufacturing method thereof. a power device includes a compound semiconductor layer epitaxially grown on a substrate, a gate formed on the compound semiconductor layer, a source and a drain provided on either side of the gate, a passivation layer provided to cover the source, drain, and gate, and a cooling space region provided to form a cooling path inside the substrate. the cooling space region may be formed to a predetermined depth from the surface of the substrate and include an enlargement region having a width increasing according to a depth from the surface of the substrate. the width of an inlet of the cooling space region is less than a maximum width of the enlargement region, and the passivation layer and the compound semiconductor layer are provided to open the cooling space region.
