Samsung electronics co., ltd. (20240096931). CAPACITOR STRUCTURE, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR STRUCTURE simplified abstract

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CAPACITOR STRUCTURE, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR STRUCTURE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Jungmin Park of Suwon-si (KR)

Hanjin Lim of Suwon-si (KR)

Hyungsuk Jung of Suwon-si (KR)

CAPACITOR STRUCTURE, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096931 titled 'CAPACITOR STRUCTURE, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR STRUCTURE

Simplified Explanation

The capacitor structure described in the abstract consists of a lower electrode structure on a substrate, an oxide of a first metal doped with a second metal, a dielectric pattern on the lower electrode structure, and an upper electrode on the dielectric pattern.

  • Lower electrode structure on a substrate with an oxide of a first metal doped with a second metal.
  • Dielectric pattern on the sidewall of the lower electrode structure.
  • Upper electrode on the sidewall of the dielectric pattern.

Potential Applications

This technology could be applied in:

  • Electronics manufacturing
  • Energy storage systems
  • Integrated circuits

Problems Solved

This technology helps in:

  • Improving capacitor performance
  • Enhancing energy storage efficiency
  • Reducing leakage current

Benefits

The benefits of this technology include:

  • Higher capacitance values
  • Improved reliability
  • Enhanced device performance

Potential Commercial Applications

The potential commercial applications of this technology could be in:

  • Consumer electronics
  • Automotive industry
  • Aerospace sector

Possible Prior Art

One possible prior art for this technology could be:

  • Traditional capacitor structures with standard materials and configurations.

What materials are specifically used in the lower electrode structure?

The lower electrode structure includes an oxide of a first metal doped with a second metal, but the specific metals are not mentioned in the abstract.

How does the dielectric pattern improve the performance of the capacitor structure?

The abstract mentions a dielectric pattern on the sidewall of the lower electrode structure, but it does not elaborate on the specific mechanism or benefits of this design feature.


Original Abstract Submitted

a capacitor structure includes a lower electrode structure disposed on a substrate, including an oxide of a first metal having 4 valence electrons, and being doped with a second metal having 3, 5, 6, or 7 valence electrons, a dielectric pattern disposed on a sidewall of the lower electrode structure, and an upper electrode disposed on a sidewall of the dielectric pattern.