Samsung electronics co., ltd. (20240096797). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096797 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a substrate, conductive structures, and interlayer dielectric layers. The conductive structures are parallel to each other on the substrate, with interlayer dielectric layers in trenches between them. The upper interlayer dielectric layer has a higher mechanical strength than the lower interlayer dielectric layer.
- Conductive structures on substrate
- Interlayer dielectric layers in trenches
- Upper interlayer dielectric layer with higher mechanical strength
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as microprocessors, memory chips, and sensors.
Problems Solved
This innovation helps improve the mechanical strength and reliability of semiconductor devices by using a stacked interlayer dielectric layer with varying strengths.
Benefits
- Enhanced mechanical strength - Improved reliability of semiconductor devices - Potential for increased performance and longevity
Potential Commercial Applications
"Enhanced Mechanical Strength in Semiconductor Devices: Applications and Benefits"
Possible Prior Art
There may be prior art related to the use of stacked interlayer dielectric layers in semiconductor devices to improve mechanical strength and reliability.
Unanswered Questions
How does this technology impact the overall performance of the semiconductor device?
The abstract does not provide specific details on how the mechanical strength of the interlayer dielectric layers affects the performance of the semiconductor device. Further research or analysis may be needed to understand this aspect.
Are there any limitations or drawbacks to using this technology in semiconductor devices?
The abstract does not mention any potential limitations or drawbacks of implementing this technology. It would be important to investigate any possible downsides, such as increased manufacturing costs or compatibility issues, before widespread adoption.
Original Abstract Submitted
disclosed is a semiconductor device including a substrate, conductive structures on the substrate and extending in parallel to each other in a first direction, and a first interlayer dielectric layer in first and second trenches between the conductive structures. a width in a second direction of the first trench may be less than a width in the second direction of the second trench. the first interlayer dielectric layer may include a lower interlayer dielectric layer and an upper interlayer dielectric layer on the lower interlayer dielectric layer, sequentially stacked. a mechanical strength of the upper interlayer dielectric layer may be greater than a mechanical strength of the lower interlayer dielectric layer.
