Samsung electronics co., ltd. (20240096796). INTEGRATED CIRCUIT DEVICE simplified abstract

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INTEGRATED CIRCUIT DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Yongjin Kim of Suwon-si (KR)

Sanghoon Ahn of Suwon-si (KR)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096796 titled 'INTEGRATED CIRCUIT DEVICE

Simplified Explanation

The patent application describes an integrated circuit device with multiple wiring structures on a substrate, each including a wiring layer, insulating pattern, capping layer, via layer, and interlayer insulating layer.

  • The wiring structures extend parallel to the substrate's upper surface and are interconnected by the via layer.
  • The insulating pattern surrounds the wiring layer's sidewall and is made of a first insulating material.
  • The capping layer on top of the wiring layer is composed of a conductive material.
  • The interlayer insulating layer covers the sidewall of the insulating pattern between each wiring structure, with an upper surface higher than the wiring layer and insulating pattern.

Potential Applications

This technology can be applied in the manufacturing of advanced integrated circuits, microprocessors, memory chips, and other electronic devices requiring complex wiring structures.

Problems Solved

This innovation helps in reducing signal interference, improving signal transmission efficiency, enhancing circuit performance, and increasing the overall reliability of integrated circuit devices.

Benefits

The benefits of this technology include higher circuit density, improved electrical connectivity, better signal integrity, and increased functionality of electronic devices.

Potential Commercial Applications

The potential commercial applications of this technology include semiconductor manufacturing companies, electronics manufacturers, and research institutions working on cutting-edge electronic devices.

Possible Prior Art

One possible prior art for this technology could be the use of similar wiring structures in previous integrated circuit designs, but with different materials or configurations.

Unanswered Questions

How does this technology compare to existing wiring structure designs in terms of performance and reliability?

This article does not provide a direct comparison with existing wiring structure designs, so it is unclear how this technology fares in terms of performance and reliability.

What are the specific manufacturing processes involved in creating these wiring structures, and how do they contribute to the overall efficiency of the integrated circuit device?

The article does not delve into the specific manufacturing processes or their impact on the device's efficiency, leaving a gap in understanding the practical implementation of this technology.


Original Abstract Submitted

an integrated circuit device includes a plurality of wiring structures on a substrate and extending in a first direction parallel to an upper surface of the substrate and each including a wiring layer on the substrate and extending in a direction perpendicular to the upper surface of the substrate; an insulating pattern surrounding a sidewall of the wiring layer and including a first insulating material; and a capping layer on an upper surface of the wiring layer and including a conductive material; a via layer on the wiring structures, the via layer being electrically connected to one wiring structure; and an interlayer insulating layer covering a sidewall of the insulating pattern between each wiring structure of the plurality of wiring structures, the interlayer insulating layer having an upper surface higher than an upper surface of each wiring layer and an upper surface of each insulating pattern.