Samsung electronics co., ltd. (20240096649). SEMICONDUCTOR PROCESS SYSTEM AND GAS TREATMENT METHOD simplified abstract
Contents
- 1 SEMICONDUCTOR PROCESS SYSTEM AND GAS TREATMENT METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR PROCESS SYSTEM AND GAS TREATMENT METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR PROCESS SYSTEM AND GAS TREATMENT METHOD
Organization Name
Inventor(s)
Jong-San Chang of Suwon-si (KR)
SEMICONDUCTOR PROCESS SYSTEM AND GAS TREATMENT METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096649 titled 'SEMICONDUCTOR PROCESS SYSTEM AND GAS TREATMENT METHOD
Simplified Explanation
The gas treatment method described in the patent application involves treating exhaust gas from a semiconductor process chamber using a gas treatment system, which includes operating a thermal oxidizer and a plasma processing apparatus.
- The method treats exhaust gas from a semiconductor process chamber.
- The method involves operating a first thermal oxidizer connected to the semiconductor process chamber.
- The treated exhaust gas passes through a plasma processing apparatus connected to the thermal oxidizer.
- The operation of the thermal oxidizer is stopped for maintenance, during which the plasma processing apparatus treats the exhaust gas.
Potential Applications
This technology can be applied in semiconductor manufacturing facilities, electronic production plants, and other industries where gas treatment of exhaust emissions is necessary.
Problems Solved
This method helps in efficiently treating exhaust gas from semiconductor process chambers while ensuring continuous operation by allowing maintenance of the thermal oxidizer without interrupting the treatment process.
Benefits
The benefits of this technology include improved exhaust gas treatment efficiency, reduced downtime for maintenance, and overall cost savings in gas treatment operations.
Potential Commercial Applications
Potential commercial applications of this technology include gas treatment systems for semiconductor manufacturing, electronic production facilities, and other industrial settings where exhaust gas treatment is required.
Possible Prior Art
One possible prior art could be the use of separate thermal oxidizers and plasma processing apparatus in gas treatment systems, but the specific combination and operation described in this patent application may be novel.
What is the environmental impact of this technology?
The environmental impact of this technology is not explicitly addressed in the abstract. However, by efficiently treating exhaust gas emissions from semiconductor process chambers, this method may contribute to reducing air pollution and minimizing the environmental footprint of semiconductor manufacturing processes.
How does this technology compare to existing gas treatment methods?
The abstract does not provide a direct comparison to existing gas treatment methods. However, the use of a thermal oxidizer in combination with a plasma processing apparatus for exhaust gas treatment in semiconductor processes may offer advantages such as improved efficiency, reduced maintenance downtime, and potentially lower operational costs compared to traditional gas treatment methods.
Original Abstract Submitted
a gas treatment method, including: treating an exhaust gas discharged from a semiconductor process chamber using a gas treatment system; and discharging the treated exhaust gas, wherein the treating of the exhaust gas includes: operating a first thermal oxidizer to treat the exhaust gas discharged from the semiconductor process chamber, the first thermal oxidizer being connected to the semiconductor process chamber and allowing the treated exhaust gas to pass through a plasma processing apparatus connected to the first thermal oxidizer; stopping the operation of the first thermal oxidizer to perform maintenance on the first thermal oxidizer; and wherein the stopping the operation of the first thermal oxidizer comprises: performing maintenance on the first thermal oxidizer; and operating the plasma processing apparatus to treat the exhaust gas discharged from the semiconductor process chamber
