Samsung electronics co., ltd. (20240096402). SENSE AMPLIFIER, MEMORY DEVICE INCLUDING SENSE AMPLIFIER AND OPERATING METHOD OF MEMORY DEVICE simplified abstract
Contents
SENSE AMPLIFIER, MEMORY DEVICE INCLUDING SENSE AMPLIFIER AND OPERATING METHOD OF MEMORY DEVICE
Organization Name
Inventor(s)
Changyoung Lee of Suwon-si (KR)
Kyuchang Kang of Suwon-si (KR)
SENSE AMPLIFIER, MEMORY DEVICE INCLUDING SENSE AMPLIFIER AND OPERATING METHOD OF MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096402 titled 'SENSE AMPLIFIER, MEMORY DEVICE INCLUDING SENSE AMPLIFIER AND OPERATING METHOD OF MEMORY DEVICE
Simplified Explanation
The sense amplifier described in the patent application is designed to amplify data stored in memory cells while performing offset cancellation and charge sharing operations. Here is a simplified explanation of the abstract:
- The sense amplifier includes isolation transistors connected to memory cells through bit lines.
- Sense amplifying circuitry is connected to the memory cells and a latch, as well as to sense bit lines.
- The circuitry performs offset cancellation while charge sharing operations are carried out between memory cells and bit lines.
Potential Applications: The technology could be applied in various memory systems, such as DRAM or SRAM, to enhance data readout and processing efficiency.
Problems Solved: The sense amplifier addresses issues related to signal amplification, offset cancellation, and charge sharing in memory systems, improving overall performance and accuracy.
Benefits: - Improved data readout accuracy - Enhanced memory system efficiency - Reduced signal interference
Potential Commercial Applications: "Enhancing Memory Readout Efficiency with Advanced Sense Amplifier Technology"
Possible Prior Art: Prior art may include existing sense amplifier designs used in memory systems, such as those optimized for speed or power efficiency.
Unanswered Questions: 1. How does the sense amplifier handle variations in cell voltages during the offset cancellation operation? 2. Are there any limitations to the charge sharing operation between memory cells and bit lines that could affect overall performance?
Original Abstract Submitted
a sense amplifier includes a first isolation transistor connected to a first memory cell through a first bit line, a second isolation transistor connected to a second memory cell through a second bit line, and sense amplifying circuitry connected to the first memory cell through the first isolation transistor, connected to the second memory cell through the second isolation transistor, and latch, to a pair of sense bit lines, data corresponding to a cell voltage stored in the first memory cell or the second memory cell, wherein the sense amplifying circuitry is configured to perform an offset cancellation operation while a charge sharing operation is performed between the first memory cell and the first bit line or between the second memory cell and the second bit line.
