Samsung electronics co., ltd. (20240096398). MEMORY DEVICE AND PRECHARGING METHOD THEREOF simplified abstract
Contents
- 1 MEMORY DEVICE AND PRECHARGING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MEMORY DEVICE AND PRECHARGING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MEMORY DEVICE AND PRECHARGING METHOD THEREOF
Organization Name
Inventor(s)
MEMORY DEVICE AND PRECHARGING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096398 titled 'MEMORY DEVICE AND PRECHARGING METHOD THEREOF
Simplified Explanation
The patent application describes a memory device and a method for precharging a decoded address. The memory device includes a memory cell array, a row decoder, and an interface circuit. The interface circuit decodes the row address, transfers it to the row decoder, precharges the decoded row address in the first mode, and precharges based on a precharge signal in the second mode.
- Memory device with precharging capability for decoded row addresses
- Interface circuit decodes row address and transfers it to row decoder
- Precharging of decoded row address in first mode, based on precharge signal in second mode
Potential Applications
This technology can be applied in various memory devices such as DRAMs, SRAMs, and flash memory to improve performance and efficiency.
Problems Solved
This technology solves the problem of delays in accessing memory cells by precharging the decoded row address, leading to faster data retrieval.
Benefits
The benefits of this technology include improved memory access speed, reduced power consumption, and enhanced overall performance of memory devices.
Potential Commercial Applications
Potential commercial applications of this technology include consumer electronics, data centers, and other computing devices where memory performance is crucial.
Possible Prior Art
One possible prior art could be the use of precharging techniques in memory devices to optimize data access speed and efficiency.
Unanswered Questions
How does this technology compare to existing precharging methods in terms of performance and efficiency?
The article does not provide a direct comparison with existing precharging methods, leaving a gap in understanding the advantages of this specific technology.
Are there any limitations or drawbacks to implementing this precharging technique in memory devices?
The article does not address any potential limitations or drawbacks of implementing this precharging technique, leaving room for further exploration of its practical implications.
Original Abstract Submitted
a memory device and a method of precharging a decoded address are provided. the memory device includes a memory cell array comprising a plurality of rows; a row decoder configured to select a row to be activated from among the plurality of rows based on a decoded row address; and an interface circuit configured to: generate the decoded row address based on decoding a plurality of bits of a row address, transfer the decoded row address to the row decoder, in a first mode of the memory device, precharge the decoded row address that is transferred to the row decoder, and in a second mode of the memory device, determine whether a precharge signal is received in the second mode, and precharge the decoded row address based on the precharge signal.
