Samsung electronics co., ltd. (20240096396). MEMORY DEVICE AND PRECHARGING METHOD THEREOF simplified abstract
Contents
MEMORY DEVICE AND PRECHARGING METHOD THEREOF
Organization Name
Inventor(s)
MEMORY DEVICE AND PRECHARGING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096396 titled 'MEMORY DEVICE AND PRECHARGING METHOD THEREOF
Simplified Explanation
The abstract describes a memory device and a method of precharging a decoded address. Here are some bullet points to explain the patent/innovation:
- Memory device with memory cell array and row decoder
- Row decoder selects row based on decoded row address
- Interface circuit decodes row address and transfers it to row decoder
- In idle mode, precharges decoded row address based on predetermined condition
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- Potential Applications
This technology could be applied in various memory devices such as RAM, flash memory, and solid-state drives.
- Problems Solved
This technology solves the problem of efficiently precharging decoded row addresses in memory devices, improving overall performance and power efficiency.
- Benefits
The benefits of this technology include faster access times, reduced power consumption, and improved reliability in memory devices.
- Potential Commercial Applications
Potential commercial applications of this technology include consumer electronics, data centers, and any devices utilizing memory storage.
- Possible Prior Art
One possible prior art could be the use of precharging techniques in memory devices to optimize performance and power efficiency.
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- Unanswered Questions
- How does this technology compare to existing precharging methods in memory devices?
This article does not provide a direct comparison to existing precharging methods in memory devices. Further research or a comparative study would be needed to address this question.
- Are there any limitations or drawbacks to implementing this precharging method in memory devices?
The article does not mention any limitations or drawbacks to implementing this precharging method. Additional testing or analysis may be required to determine any potential limitations.
Original Abstract Submitted
a memory device and a method of precharging a decoded address are provided. the memory device includes a memory cell array including a plurality of rows; a row decoder configured to select a row to be activated from among the plurality of rows based on a decoded row address; and an interface circuit configured to: generate the decoded row address based on decoding a plurality of bits of a row address, transfer the decoded row address to the row decoder, and in an idle non-power-down mode of the memory device, precharge the decoded row address that is transferred to the row decoder in response to a predetermined condition being satisfied.
