Samsung electronics co., ltd. (20240096391). MEMORY DEVICES AND METHODS THEREOF FOR MANAGING ROW HAMMER EVENTS THEREIN simplified abstract

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MEMORY DEVICES AND METHODS THEREOF FOR MANAGING ROW HAMMER EVENTS THEREIN

Organization Name

samsung electronics co., ltd.

Inventor(s)

Sunghye Cho of Suwon-si (KR)

Kijun Lee of Suwon-si (KR)

Eunae Lee of Suwon-si (KR)

Kyomin Sohn of Suwon-si (KR)

Yeonggeol Song of Suwon-si (KR)

Myungkyu Lee of Suwon-si (KR)

MEMORY DEVICES AND METHODS THEREOF FOR MANAGING ROW HAMMER EVENTS THEREIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240096391 titled 'MEMORY DEVICES AND METHODS THEREOF FOR MANAGING ROW HAMMER EVENTS THEREIN

Simplified Explanation

The memory device described in the abstract includes a row hammer managing circuit that detects a row hammer address based on a pre row hammer address and monitors a plurality of accesses to memory cells during a monitoring period. A refresh control circuit performs a refresh operation on a memory cell row physically adjacent to the row hammer address.

  • Memory device with row hammer managing circuit
  • Detects row hammer address based on pre address
  • Monitors accesses to memory cells
  • Refresh control circuit performs refresh operation on adjacent memory cell row

Potential Applications

  • Data centers
  • High-performance computing
  • Mobile devices

Problems Solved

  • Preventing data corruption due to row hammer attacks
  • Ensuring data integrity in memory devices

Benefits

  • Enhanced security
  • Improved reliability
  • Extended lifespan of memory devices

Potential Commercial Applications

Securing Data Centers with Row Hammer Protection Technology

Possible Prior Art

There have been previous solutions to address row hammer attacks, such as software-based mitigation techniques and hardware modifications to memory modules.

Unanswered Questions

How does the row hammer managing circuit detect the row hammer address accurately?

The specific mechanism or algorithm used by the circuit to detect the row hammer address is not detailed in the abstract.

What impact does the refresh operation on adjacent memory cell rows have on overall memory performance?

The abstract does not provide information on how the refresh operation affects memory access speed or latency.


Original Abstract Submitted

a memory device includes a memory cell array having a plurality of rows of memory cells therein, and a row hammer managing circuit, which is configured to detect a row hammer address based on a pre row hammer address, and each of a plurality of input row addresses associated with a plurality of accesses during a monitoring period for monitoring the plurality of accesses to a plurality of the rows of memory cells. a refresh control circuit is provided and is configured to perform a refresh operation on a memory cell row physically adjacent to a memory cell row corresponding to the row hammer address.