Samsung electronics co., ltd. (20240094461). PHOTONIC INTEGRATED CIRCUIT PLATFORM AND OPTICAL PHASE ARRAY DEVICE USING THE SAME simplified abstract

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PHOTONIC INTEGRATED CIRCUIT PLATFORM AND OPTICAL PHASE ARRAY DEVICE USING THE SAME

Organization Name

samsung electronics co., ltd.

Inventor(s)

Dongjae Shin of Seoul (KR)

Dongsik Shim of Hwaseong-si (KR)

Eunkyung Lee of Seoul (KR)

Changbum Lee of Seoul (KR)

Bongyong Jang of Suwon-si (KR)

PHOTONIC INTEGRATED CIRCUIT PLATFORM AND OPTICAL PHASE ARRAY DEVICE USING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240094461 titled 'PHOTONIC INTEGRATED CIRCUIT PLATFORM AND OPTICAL PHASE ARRAY DEVICE USING THE SAME

Simplified Explanation

The photonic integrated circuit platform described in the abstract includes multiple layers with different materials to enable the formation of optical elements for various applications. Here are some key points to explain the innovation:

  • The platform consists of a substrate, oxide layers, and optical element layers with different materials.
  • The first oxide layer is transparent and insulating, while the second oxide layer also includes an insulating transparent oxide.
  • The first optical element layer contains a semiconductor material, while the second optical element layer includes a compound semiconductor material.
  • By patterning the optical element layers, a plurality of optical elements can be formed for different functionalities.

Potential Applications

The technology described in the patent application could have various potential applications, including:

  • Optical communication systems
  • Photonic sensors
  • Quantum computing devices

Problems Solved

This technology helps solve several problems in the field of photonics, such as:

  • Integration of multiple optical elements on a single platform
  • Enhancing the performance and efficiency of photonic devices
  • Enabling the development of complex photonic circuits

Benefits

Some of the benefits of this technology include:

  • Compact and efficient photonic integrated circuits
  • Improved functionality and performance of optical devices
  • Enhanced capabilities for optical signal processing

Potential Commercial Applications

The photonic integrated circuit platform could be commercially applied in various industries, such as:

  • Telecommunications
  • Data centers
  • Biomedical imaging

Possible Prior Art

One possible prior art in this field is the use of traditional semiconductor materials for optical elements in integrated circuits. However, the use of compound semiconductor materials in combination with insulating layers as described in the patent application may be a novel approach.

Unanswered Questions

How does this technology compare to existing photonic integrated circuit platforms in terms of performance and scalability?

The article does not provide a direct comparison with existing photonic integrated circuit platforms in terms of performance and scalability. Further research or testing may be needed to evaluate these aspects.

What are the potential challenges in manufacturing and scaling up this photonic integrated circuit platform for commercial production?

The article does not address the potential challenges in manufacturing and scaling up this technology for commercial production. Factors such as cost, production yield, and scalability may need to be considered in future developments.


Original Abstract Submitted

a photonic integrated circuit platform includes a substrate, a first oxide layer disposed on the substrate and including an insulating transparent oxide, and a first optical element layer disposed on the first oxide layer and including a semiconductor material. the photonic integrated circuit platform further includes a second optical element layer disposed on the first optical element layer and including an insulating material different from the insulating transparent oxide of the first oxide layer, the second optical element layer further including a compound semiconductor material different from the semiconductor material of the first optical element layer, a second oxide layer disposed on the second optical element layer and including an insulating transparent oxide, and a plurality of optical elements formed by patterning the first optical element layer or the second optical element layer.