Samsung display co., ltd. (20240136443). THIN FILM TRANSISTOR, MANUFACTURING METHOD OF THE SAME, AND DISPLAY DEVICE HAVING THE SAME simplified abstract
Contents
- 1 THIN FILM TRANSISTOR, MANUFACTURING METHOD OF THE SAME, AND DISPLAY DEVICE HAVING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THIN FILM TRANSISTOR, MANUFACTURING METHOD OF THE SAME, AND DISPLAY DEVICE HAVING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
THIN FILM TRANSISTOR, MANUFACTURING METHOD OF THE SAME, AND DISPLAY DEVICE HAVING THE SAME
Organization Name
Inventor(s)
THIN FILM TRANSISTOR, MANUFACTURING METHOD OF THE SAME, AND DISPLAY DEVICE HAVING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136443 titled 'THIN FILM TRANSISTOR, MANUFACTURING METHOD OF THE SAME, AND DISPLAY DEVICE HAVING THE SAME
Simplified Explanation
The patent application describes a transistor structure with specific layers and materials to improve its performance.
- The transistor includes a first insulating layer, a dummy layer, a semiconductor layer with different areas, a second insulating layer, a gate electrode, a third insulating layer, and two electrodes.
- The dummy layer contains indium oxide, while the semiconductor layer contains indium gallium zinc oxide.
Potential Applications
This technology could be applied in the manufacturing of high-performance transistors for electronic devices such as smartphones, tablets, and computers.
Problems Solved
This innovation helps to enhance the efficiency and reliability of transistors by using specific materials and layer structures.
Benefits
The use of indium gallium zinc oxide in the semiconductor layer can improve the transistor's overall performance, leading to faster and more energy-efficient electronic devices.
Potential Commercial Applications
"Improving Transistor Performance with Indium Gallium Zinc Oxide Technology"
Possible Prior Art
There may be prior art related to the use of specific materials in transistor structures, but further research is needed to identify specific examples.
Unanswered Questions
How does this technology compare to traditional transistor structures in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and traditional transistor structures. Further research and testing would be needed to determine the specific advantages and disadvantages of this innovation.
What are the potential challenges in scaling up the production of transistors using this technology for mass commercial applications?
The article does not address the scalability of this technology for mass production. Factors such as cost, availability of materials, and manufacturing processes could pose challenges that need to be explored further.
Original Abstract Submitted
a transistor may include a first insulating layer disposed on a substrate, a dummy layer disposed on the first insulating layer, a semiconductor layer disposed on the dummy layer, the semiconductor layer including a first area, a second area, and a channel area disposed between the first and second areas, a second insulating layer disposed on the semiconductor layer, a gate electrode overlapping the channel area with the second insulating interposed therebetween, a third insulating layer disposed over the gate electrode, a first electrode disposed on the third insulating layer, the first electrode being electrically connected to the first area, and a second electrode disposed on the third insulating layer spaced apart from the first electrode, the second electrode being electrically connected to the second area. the dummy layer may include indium oxide, and the semiconductor layer may include indium gallium zinc oxide.
