Samsung display co., ltd. (20240107857). DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract

From WikiPatents
Jump to navigation Jump to search

DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

samsung display co., ltd.

Inventor(s)

Joon Gu Lee of Yongin-si (KR)

Hye Jin Gwark of Yongin-si (KR)

Jae Ik Kim of Yongin-si (KR)

Hwi Kim of Yongin-si (KR)

Jung Sun Park of Yongin-si (KR)

Yeon Hwa Lee of Yongin-si (KR)

DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240107857 titled 'DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The display device described in the patent application includes a thin-film transistor, a source/drain electrode, an auxiliary electrode with a first and second conductive layer, a via insulating layer with a first opening exposing the auxiliary electrode, a capping layer covering a portion of the auxiliary electrode, a light-emitting material layer, and a common electrode layer stacked on the via insulating layer and the capping layer. The source/drain electrode is connected to the thin-film transistor through a contact hole, the auxiliary electrode has an undercut, and the capping layer includes a first and second capping layer covering different parts of the auxiliary electrode.

  • Thin-film transistor
  • Source/drain electrode
  • Auxiliary electrode with first and second conductive layers
  • Via insulating layer with opening
  • Capping layer covering part of auxiliary electrode
  • Light-emitting material layer
  • Common electrode layer
  • Contact hole for electrical connection
  • Undercut in auxiliary electrode
  • First and second capping layers in capping layer

Potential Applications

The technology described in the patent application could be used in various display devices such as smartphones, tablets, televisions, and monitors.

Problems Solved

This technology solves the problem of improving the performance and efficiency of display devices by optimizing the design and functionality of the electrodes and layers involved.

Benefits

The benefits of this technology include enhanced display quality, increased energy efficiency, and improved overall performance of the display device.

Potential Commercial Applications

The technology could be applied in the manufacturing of consumer electronics, display panels, and other visual display products.

Possible Prior Art

One possible prior art for this technology could be the use of similar electrode and layer configurations in display devices, but with different designs or materials.

Unanswered Questions

How does this technology compare to existing display device technologies in terms of performance and efficiency?

This article does not provide a direct comparison between this technology and existing display device technologies in terms of performance and efficiency. Further research or testing may be needed to determine the specific advantages of this technology over others.

What are the potential limitations or challenges in implementing this technology on a large scale for commercial production?

The article does not address any potential limitations or challenges in implementing this technology on a large scale for commercial production. Factors such as cost, scalability, and compatibility with existing manufacturing processes could be important considerations that are not covered in this article.


Original Abstract Submitted

a display device includes a thin-film transistor, a source/drain electrode and an auxiliary electrode including a first conductive layer and a second conductive layer disposed on the first conductive layer, a via insulating layer having a first opening exposing the auxiliary electrode, a capping layer covering a portion of the auxiliary electrode and a light emitting material layer and a common electrode layer sequentially stacked on the via insulating layer and the capping layer, wherein the source/drain electrode is electrically connected to the thin-film transistor through a contact hole penetrating the interlayer insulating layer, the auxiliary electrode has an undercut, and the capping layer includes a first capping layer covering side surfaces of the first conductive layer of the auxiliary electrode and a second capping layer separated from the first capping layer and disposed on the second conductive layer of the auxiliary electrode.