Samsung display co., ltd. (20240102942). DEFECT ANALYSIS DEVICE AND DEFECT ANALYSIS METHOD USING THE SAME simplified abstract

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DEFECT ANALYSIS DEVICE AND DEFECT ANALYSIS METHOD USING THE SAME

Organization Name

samsung display co., ltd.

Inventor(s)

YEON KEON Moon of Yongin-si (KR)

JUN HYUNG Lim of Yongin-si (KR)

KWUN-BUM Chung of Seoul (KR)

KWANG SIK Jeong of Seoul (KR)

HYUN MIN Hong of Seoul (KR)

DEFECT ANALYSIS DEVICE AND DEFECT ANALYSIS METHOD USING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240102942 titled 'DEFECT ANALYSIS DEVICE AND DEFECT ANALYSIS METHOD USING THE SAME

Simplified Explanation

The patent application describes a defect analysis device that uses a light source to irradiate an analysis target layer of an element, a position adjuster to adjust the position in the analysis target to be irradiated, a detector to measure the current value of current flowing between different areas of the element, and an analyzer to acquire quantitative data related to defects in the analysis target layer based on the current value.

  • Light source irradiates analysis target layer with light
  • Position adjuster adjusts position in analysis target to be irradiated
  • Detector measures current flowing between different areas of the element
  • Analyzer acquires quantitative data related to defects in the analysis target layer

Potential Applications

The technology can be used in semiconductor manufacturing to detect defects in thin films or layers.

Problems Solved

This technology helps in identifying defects in the analysis target layer, which can improve the quality control process in manufacturing.

Benefits

The device provides quantitative data on defects, allowing for more accurate and efficient defect analysis.

Potential Commercial Applications

One potential commercial application of this technology is in the semiconductor industry for quality control in thin film manufacturing processes.

Possible Prior Art

One possible prior art could be similar defect analysis devices used in the semiconductor industry.

Unanswered Questions

1. How does the device handle different types of defects in the analysis target layer? 2. Are there any limitations to the size or thickness of the analysis target layer that can be effectively analyzed by the device?


Original Abstract Submitted

provided is a defect analysis device which may include a light source that irradiates an analysis target layer of an element with light, a position adjuster that adjusts a position in the analysis target in the analysis target to be irradiated with the light, a detector that measures a current value of current flowing between a source area of the element electrically connected to one end of the analysis target layer and a drain area of the element electrically connected to the other end of the analysis target layer in the element, and an analyzer that acquires quantitative data related to a defect in the analysis target layer on the basis of the current value in which, in a first mode, a plurality of areas of the analysis target layer are sequentially irradiated with the light.