Samsung display co., ltd. (20240099104). DISPLAY DEVICE INCLUDING A MULTI-LAYER THIN FILM ENCAPSULATION LAYER simplified abstract

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DISPLAY DEVICE INCLUDING A MULTI-LAYER THIN FILM ENCAPSULATION LAYER

Organization Name

samsung display co., ltd.

Inventor(s)

Hyun Ho Jung of Yongin-si (KR)

Young Tae Kim of Yongin-si (KR)

Hyun Gue Song of Yongin-si (KR)

Hee Seong Jeong of Yongin-si (KR)

Sun Jin Joo of Yongin-si (KR)

Sang Min Hong of Yongin-si (KR)

DISPLAY DEVICE INCLUDING A MULTI-LAYER THIN FILM ENCAPSULATION LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240099104 titled 'DISPLAY DEVICE INCLUDING A MULTI-LAYER THIN FILM ENCAPSULATION LAYER

Simplified Explanation

The display device described in the patent application includes multiple layers for encapsulation and protection of the light emitting element. The layers include inorganic insulating materials such as silicon nitride, silicon oxide, and silicon oxynitride. The thickness of each layer is specified to ensure proper functioning of the display device.

  • The display device includes a light emitting element with a pixel electrode, a light emitting layer, and a common electrode.
  • A capping layer is placed on the common electrode for protection.
  • An auxiliary layer is added on top of the capping layer.
  • The thin film encapsulation layer consists of three layers: a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer.
  • The first encapsulation layer contains silicon nitride, the second encapsulation layer contains silicon oxide, and the third encapsulation layer contains silicon oxynitride.
  • The thickness of the auxiliary layer is between 200 Å to 1400 Å, the first inorganic insulating layer is between 400 Å to 3500 Å, the second inorganic insulating layer is between 200 Å to 2400 Å, and the third inorganic insulating layer is 4000 Å or more.

Potential Applications

The technology described in the patent application could be used in the development of high-quality display devices for electronic devices such as smartphones, tablets, and televisions.

Problems Solved

This technology helps to improve the durability and performance of display devices by providing effective encapsulation and protection for the light emitting element.

Benefits

The use of multiple inorganic insulating layers in the encapsulation process enhances the reliability and longevity of the display device, leading to a better user experience.

Potential Commercial Applications

The technology could be applied in the manufacturing of consumer electronics, medical devices, automotive displays, and other industries where high-quality display technology is required.

Possible Prior Art

Prior art may include similar patents or research papers related to thin film encapsulation layers for display devices, especially those focusing on inorganic insulating materials like silicon nitride, silicon oxide, and silicon oxynitride.

Unanswered Questions

How does the thickness of each encapsulation layer affect the overall performance of the display device?

The thickness of each encapsulation layer plays a crucial role in determining the barrier properties and protection provided to the light emitting element. A deeper understanding of this relationship could help optimize the design of future display devices.

Are there any potential drawbacks or limitations to using multiple inorganic insulating layers in the encapsulation process?

While the use of multiple inorganic insulating layers offers benefits in terms of reliability and longevity, there may be challenges related to manufacturing complexity, cost, or compatibility with other components. Further research could explore these potential drawbacks to provide a more comprehensive understanding of the technology.


Original Abstract Submitted

a display device includes a light emitting element including a pixel electrode, a light emitting layer, and a common electrode. a capping layer is disposed on the common electrode. an auxiliary layer is disposed on the capping layer. a thin film encapsulation layer includes a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer. the first encapsulation layer includes a first inorganic insulating layer including silicon nitride; a second inorganic insulating layer including silicon oxide; and a third inorganic insulating layer including silicon oxynitride. the auxiliary layer has a thickness of 200 Å to 1400 Å, the first inorganic insulating layer has a thickness of 400 Å to 3500 Å, the second inorganic insulating layer has a thickness of 200 Å to 2400 Å, and the third inorganic insulating layer has a thickness of 4000 Å or more.