Samsung display co., ltd. (20240099078). DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME simplified abstract
Contents
- 1 DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does the doping of the dopant in the gate insulating layer or interlayer insulating layer affect the overall performance of the display apparatus?
- 1.9.3 What are the specific materials used in each layer of the display apparatus and how do they contribute to the overall performance of the device?
- 1.10 Original Abstract Submitted
DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Jongjun Baek of Yongin-si (KR)
DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099078 titled 'DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The display apparatus described in the patent application consists of multiple layers including a substrate, buffer layer, semiconductor layers, gate insulating layers, metal layers, interlayer insulating layers, and doped dopants.
- The display apparatus includes a substrate, which serves as the base for the device.
- A buffer layer is placed on the substrate to provide a stable foundation for subsequent layers.
- A first semiconductor layer is deposited on the buffer layer to facilitate electronic functions.
- A first gate insulating layer is added on top of the semiconductor layer to insulate and control the flow of current.
- A first metal layer is then applied on the gate insulating layer for conducting electricity.
- A second gate insulating layer is added on top of the first metal layer for further insulation.
- A second metal layer is deposited on the second gate insulating layer for additional conductivity.
- A first interlayer insulating layer is placed on the second metal layer to separate and insulate components.
- A first dopant is doped in at least one of the second gate insulating layer or the first interlayer insulating layer to modify the electrical properties of the device.
Potential Applications
The technology described in this patent application could be used in various display devices such as smartphones, tablets, TVs, and monitors.
Problems Solved
This technology helps in improving the performance and efficiency of display devices by optimizing the layers and materials used in their construction.
Benefits
The benefits of this technology include enhanced display quality, increased durability, and improved energy efficiency in electronic devices.
Potential Commercial Applications
The technology could be applied in the manufacturing of consumer electronics, automotive displays, medical devices, and industrial equipment.
Possible Prior Art
One possible prior art could be the use of similar layer structures in semiconductor devices and display technologies.
Unanswered Questions
How does the doping of the dopant in the gate insulating layer or interlayer insulating layer affect the overall performance of the display apparatus?
The specific effects of doping the dopant in the insulating layers on the functionality and efficiency of the display apparatus are not detailed in the abstract.
What are the specific materials used in each layer of the display apparatus and how do they contribute to the overall performance of the device?
The abstract does not provide information on the materials used in each layer and their individual roles in the functionality of the display apparatus.
Original Abstract Submitted
a display apparatus includes: a substrate; a buffer layer on the substrate; a first semiconductor layer on the buffer layer; a first gate insulating layer on the first semiconductor layer; a first metal layer on the first gate insulating layer; a second gate insulating layer on the first metal layer; a second metal layer on the second gate insulating layer; a first interlayer insulating layer on the second metal layer; and a first dopant doped in at least one of the second gate insulating layer or the first interlayer insulating layer.
