Samsung display co., ltd. (20240097069). LIGHT EMITTING ELEMENT, METHOD FOR FABRICATING LIGHT EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT EMITTING ELEMENT simplified abstract

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LIGHT EMITTING ELEMENT, METHOD FOR FABRICATING LIGHT EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT EMITTING ELEMENT

Organization Name

samsung display co., ltd.

Inventor(s)

Sang Ho Jeon of Yongin-si (KR)

Ji Song Chae of Yongin-si (KR)

LIGHT EMITTING ELEMENT, METHOD FOR FABRICATING LIGHT EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT EMITTING ELEMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240097069 titled 'LIGHT EMITTING ELEMENT, METHOD FOR FABRICATING LIGHT EMITTING ELEMENT, AND DISPLAY DEVICE INCLUDING LIGHT EMITTING ELEMENT

Simplified Explanation

The patent application describes a light emitting element with an n-type semiconductor layer containing zinc oxide, a p-type semiconductor layer, and an active layer with a quantum well structure made of zinc oxide.

  • The light emitting element includes an n-type semiconductor layer with zinc oxide.
  • The active layer has a quantum well structure with a barrier layer and a well layer made of zinc oxide.

Potential Applications

The technology could be used in:

  • LED lighting
  • Display technology
  • Optical communication devices

Problems Solved

This technology addresses issues such as:

  • Efficiency of light emission
  • Material compatibility in semiconductor devices

Benefits

The benefits of this technology include:

  • Improved performance in light emitting devices
  • Enhanced energy efficiency
  • Compatibility with existing semiconductor manufacturing processes

Potential Commercial Applications

The technology could find commercial applications in:

  • Consumer electronics
  • Automotive lighting systems
  • Medical devices

Possible Prior Art

Prior art may include:

  • Quantum well structures in semiconductor devices
  • Zinc oxide-based light emitting diodes

Unanswered Questions

How does the efficiency of this light emitting element compare to traditional LEDs?

The efficiency of this technology in comparison to traditional LEDs is not explicitly discussed in the abstract. Further research or testing may be needed to determine this.

Are there any specific limitations to the use of zinc oxide in the active layer of the light emitting element?

The abstract does not mention any limitations or challenges associated with using zinc oxide in the active layer. Additional information or studies may be required to address this aspect.


Original Abstract Submitted

a light emitting element includes an n-type semiconductor layer including a zinc oxide semiconductor, a p-type semiconductor layer, and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer. the active layer has a quantum well including a barrier layer and a well layer including zinc oxide.