Samsung display co., ltd. (20240096911). LASER CRYSTALLIZATION APPARATUS AND LASER CRYSTALLIZATION METHOD USING THE SAME simplified abstract
Contents
- 1 LASER CRYSTALLIZATION APPARATUS AND LASER CRYSTALLIZATION METHOD USING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 LASER CRYSTALLIZATION APPARATUS AND LASER CRYSTALLIZATION METHOD USING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
LASER CRYSTALLIZATION APPARATUS AND LASER CRYSTALLIZATION METHOD USING THE SAME
Organization Name
Inventor(s)
DONG-MIN Lee of Yongin-si (KR)
LASER CRYSTALLIZATION APPARATUS AND LASER CRYSTALLIZATION METHOD USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096911 titled 'LASER CRYSTALLIZATION APPARATUS AND LASER CRYSTALLIZATION METHOD USING THE SAME
Simplified Explanation
The patent application describes a laser crystallization apparatus that can minimize or prevent defects in a polycrystalline silicon film formed by laser crystallization. By utilizing a beam converter and beam concentrator, the apparatus can increase the stiffness area of an input laser beam and decrease the width of the high-intensity area, leading to a gradual dehydrogenation effect on an amorphous silicon film.
- Beam converter divides the input laser beam into multiple sub laser beams with a predetermined rotation angle.
- Beam concentrator condenses the sub laser beams to output a laser beam with a predetermined beam width.
Potential Applications
The technology can be applied in the manufacturing of electronic devices, such as displays, sensors, and solar panels, that require high-quality polycrystalline silicon films.
Problems Solved
The apparatus helps minimize or prevent defects in polycrystalline silicon films, improving the overall quality of electronic devices produced using laser crystallization.
Benefits
- Enhanced quality of polycrystalline silicon films - Reduction in defects during the manufacturing process - Improved performance and reliability of electronic devices
Potential Commercial Applications
"Advanced Laser Crystallization Apparatus for High-Quality Polycrystalline Silicon Films"
Possible Prior Art
Prior art in the field of laser crystallization may include older patents or research papers discussing methods for improving the crystallization process of silicon films using laser technology.
Unanswered Questions
How does the apparatus compare to traditional methods of laser crystallization?
The article does not provide a direct comparison between this new apparatus and traditional methods of laser crystallization. It would be interesting to know the specific advantages and disadvantages of this new technology compared to existing techniques.
What are the potential limitations or challenges in implementing this technology on an industrial scale?
The article does not address the potential challenges or limitations that may arise when implementing this technology on a larger, industrial scale. Understanding these factors is crucial for assessing the feasibility of widespread adoption of the apparatus.
Original Abstract Submitted
provided is a laser crystallization apparatus including a beam generator generating an input laser beam, a beam converter dividing an input laser beam incident from a beam generator into a plurality of sub laser beams and disposed to have a predetermined rotation angle with respect to an optical axis parallel to a traveling direction of an input laser beam, and a beam concentrator condensing a plurality of sub laser beams and outputting an output laser beam having a beam profile having a predetermined beam width. accordingly, a width of a stiffness area of a beam profile of an input laser beam may increase and a width of a high intensity area may decrease. accordingly, the number of shots for the stiffness area at specific point of an amorphous silicon film may increase. accordingly, a gradual dehydrogenation effect on an amorphous silicon film may be implemented. accordingly, occurrence of defects in a polycrystalline silicon film formed by laser crystallization may be minimized or prevented.
