Samsung display co., ltd. (20240096276). GATE DRIVING CIRCUIT simplified abstract
Contents
- 1 GATE DRIVING CIRCUIT
GATE DRIVING CIRCUIT
Organization Name
Inventor(s)
Junyoung Min of YONGIN-SI (KR)
Chaehan Hyun of YONGIN-SI (KR)
GATE DRIVING CIRCUIT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096276 titled 'GATE DRIVING CIRCUIT
Simplified Explanation
The abstract describes a gate driving circuit with multiple stages, each including controllers and output units to control and output gate signals based on voltage levels of different nodes. The first node controller includes a single gate transistor and a dual gate transistor.
- The gate driving circuit includes multiple stages with controllers and output units.
- The first node controller consists of a single gate transistor and a dual gate transistor.
- The circuit controls and outputs gate signals based on voltage levels of different nodes.
Potential Applications
This technology could be applied in various electronic devices such as power converters, inverters, and motor drives where precise control of gate signals is required.
Problems Solved
This technology solves the problem of efficiently controlling gate signals in electronic circuits with multiple stages, ensuring accurate and reliable operation.
Benefits
The use of multiple stages with different controllers and output units allows for more precise control of gate signals, leading to improved performance and efficiency in electronic devices.
Potential Commercial Applications
The gate driving circuit technology could be utilized in industries such as renewable energy, electric vehicles, and industrial automation for enhancing the performance and reliability of electronic systems.
Possible Prior Art
Prior art in gate driving circuits may include similar designs with multiple stages and controllers for controlling gate signals in electronic devices. However, the specific configuration of the first node controller with a single gate transistor and a dual gate transistor may be a novel aspect of this technology.
Unanswered Questions
How does this technology compare to traditional gate driving circuits in terms of efficiency and performance?
This article does not provide a direct comparison between this technology and traditional gate driving circuits in terms of efficiency and performance. Further research or testing may be needed to evaluate the advantages of this innovation over existing solutions.
What are the potential challenges or limitations of implementing this gate driving circuit in practical electronic devices?
The article does not address the potential challenges or limitations of implementing this gate driving circuit in practical electronic devices. Factors such as cost, complexity, and compatibility with existing systems could be important considerations that need to be explored further.
Original Abstract Submitted
each of a plurality of stages of a gate driving circuit includes a first node controller configured to control voltage levels of a first node and a second node, a second node controller configured to control a voltage level of a third node, and a first output unit configured to output the first voltage or the second voltage as a gate signal according to the voltage levels of the second node and the third node. the first node controller includes a single gate transistor having one gate and a dual gate transistor having a pair of gates disposed in different layers with a semiconductor disposed therebetween.
