STMICROELECTRONICS S.r.l. patent applications published on November 30th, 2023

Summary of the patent applications from STMICROELECTRONICS S.r.l. on November 30th, 2023

STMICROELECTRONICS S.r.l. has recently filed several patents related to various technologies. These patents cover phase-change memory cells, MEMS thermoelectric generators, LED driver chips, methods for attaching semiconductor dies, circuits with biasing and low-frequency recovery capabilities, methods for personalizing integrated circuits, and devices for accurately detecting the angle of a lid.

Summary: STMICROELECTRONICS S.r.l. has filed patents for phase-change memory cells, MEMS thermoelectric generators, LED driver chips, methods for attaching semiconductor dies, circuits with biasing and low-frequency recovery capabilities, methods for personalizing integrated circuits, and devices for accurately detecting the angle of a lid.

Notable Applications:

• Phase-change memory cells with a stack containing germanium or nitrogen-doped germanium and a first alloy of germanium, antimony, and tellurium.
• MEMS thermoelectric generators with thermoelectric cells, thermoplastic layers, heat sinks, and thermal vias.
• LED driver chips with fault-detection circuits for pin-to-pin and pin-to-ground short detection.
• Methods for attaching semiconductor dies to substrates and creating electrically conductive formations on the dies.
• Circuits with biasing and low-frequency recovery capabilities using voltage and current digital-to-analog converters, amplifiers, and transistors.
• Methods for personalizing integrated circuits by storing personalization data in non-volatile memory.
• Devices and methods for accurately detecting the angle of a lid, even when the device is upright, using sensor units and various combinations of accelerometers, gyroscopes, and magnetometers.
• Micromachined pressure transducers with deformable structures and a movable region made of semiconductor material, mechanically coupled to a fixed body.

• Phase-change memory cells with stack and resistive layer.
• MEMS thermoelectric generators with thermoelectric cells, thermoplastic layers, heat sinks, and thermal vias.
• LED driver chips with fault-detection circuits for pin-to-pin and pin-to-ground short detection.
• Methods for attaching semiconductor dies to substrates and creating electrically conductive formations.
• Circuits with biasing and low-frequency recovery capabilities using voltage and current digital-to-analog converters, amplifiers, and transistors.
• Methods for personalizing integrated circuits by storing personalization data in non-volatile memory.
• Devices and methods for accurately detecting the angle of a lid, even when the device is upright, using sensor units and combinations of accelerometers, gyroscopes, and magnetometers.
• Micromachined pressure transducers with deformable structures and a movable region.

Patent applications for STMICROELECTRONICS S.r.l. on November 30th, 2023

PIEZOELECTRIC MICROMACHINED PRESSURE TRANSDUCER WITH HIGH SENSITIVITY AND RELATED MANUFACTURING PROCESS (18320876)

Main Inventor

Domenico GIUSTI

Brief explanation

The patent application describes a micromachined pressure transducer that includes a fixed body of semiconductor material and a transduction structure. The transduction structure is suspended on a main cavity and consists of deformable structures and a movable region made of semiconductor material. The deformable structures are mechanically coupled to the fixed body and the movable region.

• The pressure transducer includes a fixed body of semiconductor material and a transduction structure.
• The transduction structure is suspended on a main cavity.
• The transduction structure consists of deformable structures and a movable region made of semiconductor material.
• The deformable structures are mechanically coupled to the fixed body and the movable region.
• Each deformable structure includes a support structure of semiconductor material.
• The support structure has two beams, one superimposed on the other, with ends fixed to the fixed body and the movable region.
• The deformable structures also include at least one piezoelectric transduction structure, mechanically coupled to the first beam.
• The piezoelectric transduction structures are electrically controllable.
• The piezoelectric transduction structures cause deformations in the support structures, resulting in a translation of the movable region along a specific direction.

Abstract

Micromachined pressure transducer including: a fixed body of semiconductor material, which laterally delimits a main cavity; a transduction structure, which is suspended on the main cavity and includes at least a pair of deformable structures and a movable region, which is formed by semiconductor material and is mechanically coupled to the fixed body through the deformable structures. Each deformable structure includes: a support structure of semiconductor material, which includes a first and a second beam, each of which has ends fixed respectively to the fixed body and to the movable region, the first beam being superimposed, at a distance, on the second beam; and at least one piezoelectric transduction structure, mechanically coupled to the first beam. The piezoelectric transduction structures are electrically controllable so that they cause corresponding deformations of the respective support structures and a consequent translation of the movable region along a translation direction.

LID ANGLE DETECTION (17827395)

Main Inventor

Federico RIZZARDINI

Brief explanation

The patent application describes a device and method for accurately detecting the angle of a lid, even when the device is upright.

• The device uses two sensor units to measure acceleration and angular velocity while in a sleep state.
• Based on these measurements, the orientations of different components of the lid are calculated.
• When the device wakes up, a processor estimates the lid angle using the calculated orientations.
• This estimated lid angle is set as the initial angle and then updated using various combinations of accelerometers, gyroscopes, and magnetometers.

Abstract

The present disclosure is directed to a device and method for lid angle detection that is accurate even if the device is activated in an upright position. While the device is in a sleep state, first and second sensor units measure acceleration and angular velocity, and calculate orientations of respective lid components based on the acceleration and angular velocity measurements. Upon the device exiting the sleep state, a processor estimates the lid angle using the calculated orientations, sets the estimated lid angle as an initial lid angle, and updates the initial lid angle using, for example, two accelerometers; two accelerometers and two gyroscopes; two accelerometers and two magnetometers; or two accelerometers, two gyroscopes, and two magnetometers.

LID ANGLE DETECTION (18183464)

Main Inventor

Federico RIZZARDINI

Brief explanation

The patent application is for a device and method to accurately detect the angle of a lid, even if the device is upright when activated. 

• The device has two sensor units that measure acceleration and angular velocity while in a sleep state.
• Based on these measurements, the orientations of different components of the lid are calculated.
• When the device wakes up, a processor estimates the lid angle using the calculated orientations.
• This estimated lid angle is set as the initial lid angle.
• The initial lid angle is then updated using various combinations of sensors, such as accelerometers, gyroscopes, and magnetometers.

Abstract

The present disclosure is directed to a device and method for lid angle detection that is accurate even if the device is activated in an upright position. While the device is in a sleep state, first and second sensor units measure acceleration and angular velocity, and calculate orientations of respective lid components based on the acceleration and angular velocity measurements. Upon the device exiting the sleep state, a processor estimates the lid angle using the calculated orientations, sets the estimated lid angle as an initial lid angle, and updates the initial lid angle using, for example, two accelerometers; two accelerometers and two gyroscopes; two accelerometers and two magnetometers; or two accelerometers, two gyroscopes, and two magnetometers.

METHOD FOR INTRODUCING PERSONALIZATION DATA IN NON VOLATILE MEMORIES OF A PLURALITY OF INTEGRATED CIRCUITS, IN PARTICULAR IN INTEGRATED CIRCUIT CARDS, CORRESPONDING SYSTEM AND COMPUTER PROGRAM PRODUCT ([[US Patent Application 18320414. METHOD FOR INTRODUCING PERSONALIZATION DATA IN NON VOLATILE MEMORIES OF A PLURALITY OF INTEGRATED CIRCUITS, IN PARTICULAR IN INTEGRATED CIRCUIT CARDS, CORRESPONDING SYSTEM AND COMPUTER PROGRAM PRODUCT simplified abstract (STMICROELECTRONICS S.r.l.)|18320414]])

Main Inventor

Marco Alfarano

Brief explanation

This patent application describes a method for personalizing an integrated circuit by storing personalization data in a non-volatile memory.

• The method involves writing a static data image in a specific part of the memory that stores the operating system.
• A set of personalization data, specific to the integrated circuit, is written in the static data image.
• A subset of the personalization data is stored in a reserved area of the memory by reserving the space and storing commands for writing the data.
• The commands are converted into an encoded inner command script using a known code.
• The inner command script is stored in the reserved area of the memory.
• During activation of the integrated circuit, the inner command script is decoded and executed to obtain the commands.
• The integrated circuit then executes the commands to personalize itself based on the stored data.

Abstract

In embodiments, a method is provided that includes writing a static data image in an invariant part of a non-volatile memory of an integrated circuit used to store an operating system; writing a set of personalization data in the static data image representing data specific to the integrated circuit; storing a subset of the set of personalization data in a reserved area of the non-volatile memory by reserving the reserved area and storing commands for writing the set of personalization data by an application or the operating system; converting the commands with a known code to obtain an inner command script, the inner script including the commands as encoded; storing the inner command script in the reserved area of the non-volatile memory; decoding and executing the inner command script to obtain the commands during an activation of the integrated circuit; and executing the commands by the integrated circuit.

CIRCUIT FOR BIASING AN EXTERNAL RESISTIVE SENSOR (18191639)

Main Inventor

Dario Livornesi

Brief explanation

The patent application describes a circuit that includes a biasing circuit and a low-frequency recovery circuit.

• The biasing circuit consists of a voltage digital to analog converter (V-DAC), a differential difference amplifier, a common-mode feedback (CMFB) amplifier, and a pair of transistors.
• The low-frequency recovery circuit consists of a current digital to analog converter (C-DAC), a pair of transistors, a pair of resistors, and a gain circuit.
• The biasing circuit is responsible for providing the appropriate bias voltage to the circuit.
• The low-frequency recovery circuit is responsible for recovering low-frequency signals from a resistive sensor.
• The V-DAC and C-DAC convert digital signals to analog signals for the biasing and recovery circuits, respectively.
• The differential difference amplifier amplifies the voltage difference between two input signals.
• The CMFB amplifier provides feedback to maintain the common-mode voltage of the circuit.
• The high-impedance structure of the transistors helps in maintaining signal integrity.
• The resistors in the low-frequency recovery circuit have a resistance value equal to half of the resistance of the resistive sensor.
• The gain circuit amplifies the recovered low-frequency signals.

Abstract

According to an embodiment, a circuit includes a biasing and a low-frequency recovery circuit. The biasing circuit includes a voltage digital to analog converter (V-DAC), a differential difference amplifier coupled to the V-DAC, a common-mode feedback (CMFB) amplifier coupled to the differential difference amplifier, and a first pair of transistors arranged as a high-impedance structure and coupled to the differential difference amplifier and the CMFB amplifier. The low-frequency recovery circuit includes a current digital to analog converter (C-DAC), a second pair of transistors arranged as a high-impedance structure and coupled to the first pair of transistors, a pair of resistors having a resistance value equal to half a resistance of the resistive sensor, the pair of resistors arranged between the second pair of transistors and coupled to the C-DAC, and a gain circuit coupled to shared nodes between the second pair of transistors and the pair of resistors.

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING SEMICONDUCTOR DEVICE (18324897)

Main Inventor

Michele DERAI

Brief explanation

The patent application describes a method for attaching a semiconductor die to a substrate and creating electrically conductive formations on the die.

• The semiconductor die is attached to a substrate, such as a leadframe.
• The die has contact pads made of a first electrically conductive material.
• An encapsulation material is molded onto the die.
• Laser beam energy is used to activate the encapsulation material at selected locations.
• Electrically conductive formations, called vias, are created in the activated areas.
• The vias are made of a second electrically conductive material different from the contact pad material.
• A nickel layer is formed over the contact pad material to promote adhesion between the second conductive material and the first conductive material.

Abstract

A semiconductor die is attached on a die-attachment portion of a substrate such as a leadframe. The semiconductor die has a front surface opposite the substrate and one or more contact pads at the front surface having an outer surface finishing of a first electrically conductive material such as NiPd or Al. An encapsulation of laser direct structuring, LDS material is molded onto the semiconductor die attached on the substrate. Laser beam energy is applied to selected locations of the front surface of the encapsulation of LDS material to activate the LDS material at the selected locations and structure therein electrically conductive formations comprising one or more vias towards the contact pad. The vias comprise a second electrically conductive material that is different from the first electrically conductive material of the outer surface finishing of the contact pad. Prior to growing the second electrically conductive material a nickel layer is formed over the outer surface finishing of the contact pad, wherein the nickel layer promotes adhesion between the second electrically conductive material and the first electrically conductive material.

LED ARRAY DRIVER WITH CHANNEL TO CHANNEL AND CHANNEL TO GROUND EXTERNAL PIN SHORT DETECTION (17826461)

Main Inventor

Maria Francesca SEMINARA

Brief explanation

The abstract describes a LED driver chip that includes driver circuits with fault-detection circuits.

• Each driver circuit is connected to a different pin and has a fault-detection circuit.
• The fault-detection circuit includes a force circuit that directs current to a force node.
• The fault-detection circuit also includes a sense circuit with a current sensor connected to the force node.
• The sense circuit has a comparator that compares the voltage at the force node to a reference voltage and generates a comparison output.
• The LED driver chip has control circuitry that can activate different modes of operation for pin-to-pin short detection and pin-to-ground short detection.
• In the pin-to-pin short detection mode, the force circuit of one driver circuit is activated, and the sense circuit of another driver circuit is activated.
• In the pin-to-ground short detection mode, the force circuit and the sense circuit of the same driver circuit are activated.
• The comparison output of the activated sense circuit can indicate the presence of a short between pins or to ground based on whether it is higher or lower than the reference voltage, respectively.

Abstract

A LED driver chip includes driver circuits, each being coupled to a different pin and including a fault-detection circuit. Each fault-detection circuit includes a force circuit forcing current to a force node, and a sense circuit including a current sensor coupled to the force node, and a comparator comparing a voltage at the force node to a reference voltage to generate a comparison output. Control circuitry, in a pin-to-pin short detection mode, activates the force circuit of a first of the driver circuits and activates the sense circuit of a second of the driver circuits, in a pin-to-ground short detection mode, activates the force and the sense circuit of the same driver circuits. The comparison output of the comparator of the activated sense circuit, if is higher or if lower of the reference voltage, indicates if short between pin or to ground, respectively, is present.

MEMS THERMOELECTRIC GENERATOR, MANUFACTURING PROCESS OF THE GENERATOR AND HEATING SYSTEM COMPRISING THE GENERATOR (18318612)

Main Inventor

Paolo FERRARI

Brief explanation

The patent application describes a MEMS thermoelectric generator that includes a thermoelectric cell, a thermoplastic layer, a heat sink, and a thermal via.

• The thermoelectric cell has thermoelectric elements that partially extend on a cavity within the cell.
• The thermoplastic layer is made of thermally insulating material and is processed using laser direct structuring (LDS) technique.
• The heat sink is designed to exchange heat with the thermoelectric cell, with the thermoplastic layer in between.
• A thermal via made of metal material extends through the thermoplastic layer, superimposed on the cavity of the thermoelectric cell.
• The thermoelectric cell can exchange heat with a thermal source through the thermal via.

Abstract

MEMS thermoelectric generator comprising: a thermoelectric cell including one or more thermoelectric elements partially extending on a cavity of the thermoelectric cell; a thermoplastic layer extending on the thermoelectric cell and having a top surface and a bottom surface opposite to each other along a first axis, the bottom surface facing the thermoelectric cell and the thermoplastic layer being of thermally insulating material and configured to be processed through laser direct structuring, LDS, technique; a heat sink configured to exchange heat with the thermoelectric cell interposed, along the first axis, between the heat sink and the thermoplastic layer; and a thermal via of metal material, extending through the thermoplastic layer from the top surface to the bottom surface so that it is superimposed, along the first axis, on the cavity, wherein the thermoelectric cell may exchange heat with a thermal source through the thermal via.

PHASE-CHANGE MEMORY CELL (18305268)

Main Inventor

Paolo Giuseppe CAPPELLETTI

Brief explanation

The patent application is about phase-change memory cells and their manufacturing and operation methods.

• The phase-change memory cell consists of a heater and a stack.
• The stack includes at least one layer of germanium or nitrogen-doped germanium, and at least one layer of a first alloy containing germanium, antimony, and tellurium.
• A resistive layer is positioned between the heater and the stack.

Abstract

Phase-change memory cells and methods of manufacturing and operating phase-change memory cells are provided. In at least one embodiment, a phase-change memory cell includes a heater and a stack. The stack includes at least one germanium layer or a nitrogen doped germanium layer, and at least one layer of a first alloy including germanium, antimony, and tellurium. A resistive layer is located between the heater and the stack.