Difference between revisions of "SK hynix Inc. patent applications published on November 30th, 2023"

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'''Summary of the patent applications from SK hynix Inc. on November 30th, 2023'''
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SK hynix Inc. has recently filed several patents related to resistive memory devices, semiconductor memory devices, memory device manufacturing methods, and semiconductor device fabrication methods. These patents aim to improve the performance, efficiency, and reliability of memory devices and semiconductor devices.
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Summary:
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- SK hynix Inc. has filed patents for resistive memory devices with stack structures and slit structures, which are designed to improve memory block division and organization.
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- They have also filed patents for memory devices with stacked gate lines, main plugs, and plug separation patterns, which aim to enhance the structure and functionality of memory devices.
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- Additionally, SK hynix Inc. has filed patents for semiconductor memory devices with gate stacks, channel structures, core insulating layers, and barrier layers, which aim to improve the performance and efficiency of memory devices.
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- They have also filed patents for semiconductor memory devices with multiple stack structures, vertical structures, memory layers, channel patterns, and bit line contact structures, which aim to enhance the functionality and design of memory devices.
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- SK hynix Inc. has filed patents for methods of fabricating semiconductor devices, including the formation of sacrificial pads, etch target layers, openings, pillars, isolation trenches, and pad-type recesses, which aim to improve the fabrication process and structure of semiconductor devices.
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- They have also filed patents for electronic circuit board designs with multiple conductor layers, signal transmission pads, mesh structures, voids, and improved signal transmission and reception capabilities.
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- SK hynix Inc. has filed a patent for a controller with a storage memory, decoder, and processing circuit, which aims to improve the reliability of data decoding in a controller.
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- They have also filed a patent for a semiconductor wafer with chip sealing regions, scribe lane regions, chip guards, test circuit patterns, ground lines, and ground wiring layers, which aim to protect and test the chips on the wafer effectively.
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- Notable applications include resistive memory devices, semiconductor memory devices, memory device manufacturing methods, semiconductor device fabrication methods, electronic circuit board designs, and storage system designs.
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Notable Applications:
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* Resistive memory devices with stack structures and slit structures.
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* Memory devices with stacked gate lines, main plugs, and plug separation patterns.
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* Semiconductor memory devices with gate stacks, channel structures, core insulating layers, and barrier layers.
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* Semiconductor memory devices with multiple stack structures, vertical structures, memory layers, channel patterns, and bit line contact structures.
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* Methods of fabricating semiconductor devices, including sacrificial pads, etch target layers, openings, pillars, isolation trenches, and pad-type recesses.
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* Electronic circuit board designs with multiple conductor layers, signal transmission pads, mesh structures, and voids.
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* Controllers with storage memory, decoders, and processing circuits.
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* Semiconductor wafers with chip sealing regions, scribe lane regions, chip guards, test circuit patterns, ground lines, and ground wiring layers.
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* Storage systems with decoupling devices and unit capacitors.
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==Patent applications for SK hynix Inc. on November 30th, 2023==
 
==Patent applications for SK hynix Inc. on November 30th, 2023==

Revision as of 08:28, 6 December 2023

Summary of the patent applications from SK hynix Inc. on November 30th, 2023

SK hynix Inc. has recently filed several patents related to resistive memory devices, semiconductor memory devices, memory device manufacturing methods, and semiconductor device fabrication methods. These patents aim to improve the performance, efficiency, and reliability of memory devices and semiconductor devices.

Summary: - SK hynix Inc. has filed patents for resistive memory devices with stack structures and slit structures, which are designed to improve memory block division and organization. - They have also filed patents for memory devices with stacked gate lines, main plugs, and plug separation patterns, which aim to enhance the structure and functionality of memory devices. - Additionally, SK hynix Inc. has filed patents for semiconductor memory devices with gate stacks, channel structures, core insulating layers, and barrier layers, which aim to improve the performance and efficiency of memory devices. - They have also filed patents for semiconductor memory devices with multiple stack structures, vertical structures, memory layers, channel patterns, and bit line contact structures, which aim to enhance the functionality and design of memory devices. - SK hynix Inc. has filed patents for methods of fabricating semiconductor devices, including the formation of sacrificial pads, etch target layers, openings, pillars, isolation trenches, and pad-type recesses, which aim to improve the fabrication process and structure of semiconductor devices. - They have also filed patents for electronic circuit board designs with multiple conductor layers, signal transmission pads, mesh structures, voids, and improved signal transmission and reception capabilities. - SK hynix Inc. has filed a patent for a controller with a storage memory, decoder, and processing circuit, which aims to improve the reliability of data decoding in a controller. - They have also filed a patent for a semiconductor wafer with chip sealing regions, scribe lane regions, chip guards, test circuit patterns, ground lines, and ground wiring layers, which aim to protect and test the chips on the wafer effectively. - Notable applications include resistive memory devices, semiconductor memory devices, memory device manufacturing methods, semiconductor device fabrication methods, electronic circuit board designs, and storage system designs.

Notable Applications:

  • Resistive memory devices with stack structures and slit structures.
  • Memory devices with stacked gate lines, main plugs, and plug separation patterns.
  • Semiconductor memory devices with gate stacks, channel structures, core insulating layers, and barrier layers.
  • Semiconductor memory devices with multiple stack structures, vertical structures, memory layers, channel patterns, and bit line contact structures.
  • Methods of fabricating semiconductor devices, including sacrificial pads, etch target layers, openings, pillars, isolation trenches, and pad-type recesses.
  • Electronic circuit board designs with multiple conductor layers, signal transmission pads, mesh structures, and voids.
  • Controllers with storage memory, decoders, and processing circuits.
  • Semiconductor wafers with chip sealing regions, scribe lane regions, chip guards, test circuit patterns, ground lines, and ground wiring layers.
  • Storage systems with decoupling devices and unit capacitors.



Patent applications for SK hynix Inc. on November 30th, 2023