SEMICONDUCTOR PACKAGE: abstract simplified (18131258)

From WikiPatents
Jump to navigation Jump to search
  • This abstract for appeared for patent application number 18131258 Titled 'SEMICONDUCTOR PACKAGE'

Simplified Explanation

The abstract describes a semiconductor package that consists of a layer that encapsulates a semiconductor chip, and another layer called the redistribution level layer that is placed on top of the encapsulation layer. The redistribution level layer includes a redistribution layer and a redistribution insulating layer that isolates the redistribution layer. The abstract also mentions the presence of a laser mark area on the redistribution layer and the redistribution insulating layer, which is made up of multiple mesh-like redistribution insulating patterns arranged on a plane and surrounded by the redistribution layer. Additionally, there is a laser mark insulating layer on top of the redistribution layer and the redistribution insulating layer, which exposes the redistribution layer and the mesh-like redistribution insulating patterns in the laser mark area.


Original Abstract Submitted

A semiconductor package includes an encapsulation layer encapsulating at least one semiconductor chip, and a redistribution level layer disposed on the encapsulation layer. The redistribution level layer includes a redistribution layer and a redistribution insulating layer insulating the redistribution layer, a laser mark area is disposed on the redistribution layer and the redistribution insulating layer, and the redistribution insulating layer of the laser mark area comprises a plurality of mesh-type redistribution insulating patterns arranged apart from each other on a plane and surrounded by the redistribution layer. The redistribution level layer includes a laser mark insulating layer located on the redistribution layer and the redistribution insulating layer, wherein the laser mark insulating layer includes a laser mark exposing the redistribution layer and the mesh-type redistribution insulating patterns in the laser mark area.