SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME: abstract simplified (18067390)

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  • This abstract for appeared for patent application number 18067390 Titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME'

Simplified Explanation

This abstract describes a semiconductor memory device that includes various components such as a substrate, an active area, a word line, a bit line, and a bit line contact. The active area is defined by an element isolation layer on the substrate. The word line and bit line cross the active area in different directions. The bit line contact is directly connected to both the bit line and the active area, and it is located between the substrate and the bit line. The bit line contact consists of a lower bit line contact that is directly connected to the active area, and an upper bit line contact that is on top of and in contact with the lower bit line contact. The width of the upper surface of the lower bit line contact is greater than the width of the lower surface of the upper bit line contact in the direction perpendicular to the bit line.


Original Abstract Submitted

A semiconductor memory device may include a substrate including an active area defined by an element isolation layer on the substrate, a word line crossing the active area and extending in a first direction, a bit line crossing the active area on the substrate and extending in a second direction, and a bit line contact directly connected to the bit line and the active area. The bit line contact may be between the substrate and the bit line. The bit line contact may include a lower bit line contact directly connected to the active area and an upper bit line contact on and in contact with the lower bit line contact. A width of an upper surface of the lower bit line contact in the second direction may be greater than a width of a lower surface of the upper bit line contact in the second direction.

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