SEMICONDUCTOR DEVICE STRUCTURE WITH RESISTIVE ELEMENT: abstract simplified (18333124)

• This abstract for appeared for patent application number 18333124 Titled 'SEMICONDUCTOR DEVICE STRUCTURE WITH RESISTIVE ELEMENT'

Simplified Explanation

The abstract describes a semiconductor device structure that includes multiple layers of materials. It consists of a first dielectric layer, which is a non-conductive material, and two conductive features surrounded by the first dielectric layer. There is also a second dielectric layer on top of the first dielectric layer. The second dielectric layer surrounds a resistive element that is electrically connected to one of the conductive features. Additionally, there is a conductive via that is electrically connected to the other conductive feature. The second dielectric layer also surrounds a portion of the conductive via. The contact area between the resistive element and the first conductive feature is wider than the contact area between the conductive via and the second conductive feature.

Original Abstract Submitted

A semiconductor device structure is provided. The semiconductor device structure includes a first dielectric layer and a first conductive feature and a second conductive feature surrounded by the first dielectric layer. The semiconductor device structure also includes a second dielectric layer over the first dielectric layer and a resistive element electrically connected to the first conductive feature. The second dielectric layer surrounds a portion of the resistive element. The semiconductor device structure further includes a conductive via electrically connected to the second conductive feature. The second dielectric layer surrounds a portion of the conductive via, and a contact area between the resistive element and the first conductive feature is wider than a contact area between the conductive via and the second conductive feature.