SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME: abstract simplified (17717892)

• This abstract for appeared for patent application number 17717892 Titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME'

Simplified Explanation

This abstract describes a method for creating a semiconductor device structure. The method involves several steps, including forming a gate stack on a substrate, adding a spacer structure to the side of the gate stack, and creating a source/drain structure on the substrate. The spacer structure is positioned between the source/drain structure and the gate stack. The method also includes partially removing the outer layer and the middle layer, leaving lower portions of each layer between the source/drain structure and the gate stack.

Original Abstract Submitted

A method for forming a semiconductor device structure is provided. The method includes forming a gate stack over a substrate. The method includes forming a spacer structure over a sidewall of the gate stack. The method includes forming a source/drain structure in and over the substrate, wherein a portion of the spacer structure is between the source/drain structure and the gate stack. The method includes partially removing the outer layer, wherein a first lower portion of the outer layer remains between the source/drain structure and the gate stack. The method includes partially removing the middle layer, wherein a second lower portion of the middle layer remains between the source/drain structure and the gate stack.