SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME: abstract simplified (18050684)

• This abstract for appeared for patent application number 18050684 Titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME'

Simplified Explanation

This abstract describes a semiconductor device that consists of a substrate with a first active pattern. On top of this pattern, there is a first channel pattern, which is made up of three semiconductor patterns stacked vertically and spaced apart from each other. These semiconductor patterns are connected to a first source/drain pattern, and there is a gate electrode on top of all three semiconductor patterns.

The first source/drain pattern has three protrusions, each protruding towards one of the semiconductor patterns. The second protrusion is wider than the first protrusion, and the third protrusion is wider than the second protrusion.

Original Abstract Submitted

A semiconductor device includes a substrate including a first active pattern, a first channel pattern on the first active pattern, the first channel pattern including first, second, and third semiconductor patterns spaced apart from one another and vertically stacked, a first source/drain pattern connected to the first to third semiconductor patterns, and a gate electrode on the first to third semiconductor patterns. The first source/drain pattern includes a first protrusion protruding toward the first semiconductor pattern, a second protrusion protruding toward the second semiconductor pattern, and a third protrusion protruding toward the third semiconductor pattern. A width of the second protrusion is greater than a width of the first protrusion. A width of the third protrusion is greater than the width of the second protrusion.