SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME: abstract simplified (18333982)

• This abstract for appeared for patent application number 18333982 Titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME'

Simplified Explanation

This method involves creating a layer of a 2-D material on a substrate, using transition metal and chalcogen atoms. A gate structure is then formed on top of this layer. Chemical molecules are supplied to the 2-D material layer, causing a reaction that weakens the covalent bonds between the chalcogen atoms and transition metal atoms. Finally, source/drain contacts are formed on the 2-D material layer, where the contact metal atoms create metallic bonds with the transition metal atoms.

Original Abstract Submitted

A method includes forming a 2-D material layer over a substrate, wherein the 2-D material layer comprises transition metal atoms and chalcogen atoms; forming a gate structure over the 2-D material layer; supplying chemical molecules to the 2-D material layer, such that atoms of the chemical molecules react with portions of the chalcogen atoms to weaken covalent bonds between the portions of the chalcogen atoms and the transition metal atoms; and forming source/drain contacts over the 2-D material layer, wherein contact metal atoms of the source/drain contacts form metallic bonds with the transition metal atoms of the 2-D material layer.