SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME: abstract simplified (17719040)

• This abstract for appeared for patent application number 17719040 Titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME'

Simplified Explanation

The abstract describes a method for fabricating a semiconductor device. The method involves creating a semiconductor fin on a substrate and isolating it with a structure. Metal oxide layers are then deposited on top of each other, followed by a chemical polishing process. After polishing, an annealing process is performed to convert the metal oxide layers from amorphous to crystalline structures. Finally, a gate structure and source/drain structures are formed on the device.

Original Abstract Submitted

A method includes forming a semiconductor fin protruding over a substrate; forming an isolation structure over the substrate; depositing a first metal oxide layer over the isolation structure; depositing a first oxide layer over the first metal oxide layer; depositing a second metal oxide layer over the first oxide layer, in which the first metal oxide layer and the second metal oxide layer comprise amorphous structures; performing a chemical mechanism polishing (CMP) process to the first metal oxide layer, the first oxide layer, and the second metal oxide layer; after the CMP process is completed, performing an annealing process such that the first metal oxide layer and the second metal oxide layer are transferred from the amorphous structures into crystalline structures; forming a gate structure over the semiconductor fin; and forming source/drain structures over the substrate and on opposite sides of the gate structure.