SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF: abstract simplified (17715967)

• This abstract for appeared for patent application number 17715967 Titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF'

Simplified Explanation

This abstract describes a manufacturing method for a semiconductor device. The method involves creating a stack of alternating layers of different types of semiconductors. A mask layer is then applied to the topmost layer of the stack, and a trench is formed in the stack based on the pattern of the mask layer. This creates a fin structure. A cladding layer is then added to the sidewalls of the fin structure. The mask layer and a portion of the cladding layer are then removed using a two-step etching process. This results in the formation of cladding spacers with a concave top surface that gradually deepens from the sidewalls of the fin structure.

Original Abstract Submitted

A manufacturing method of a semiconductor device includes forming a stack of first semiconductor layers and second semiconductor layers alternatively formed on top of one another, where a topmost layer of the stack is one of the second semiconductor layers; forming a patterned mask layer on the topmost layer of the stack; forming a trench in the stack based on the patterned mask layer to form a fin structure; forming a cladding layer extending along sidewalls of the fin structure; and removing the patterned mask layer and a portion of the cladding layer by performing a two-step etching process, where the portion of the cladding layer is removed to form cladding spacers having a concave top surface with a recess depth increasing from the sidewalls of the fin structure.