SEMICONDUCTOR DEVICES HAVING MERGED SOURCE/DRAIN FEATURES AND METHODS OF FABRICATION THEREOF: abstract simplified (18205538)

• This abstract for appeared for patent application number 18205538 Titled 'SEMICONDUCTOR DEVICES HAVING MERGED SOURCE/DRAIN FEATURES AND METHODS OF FABRICATION THEREOF'

Simplified Explanation

This abstract describes a method for creating merged source/drain features by combining multiple fin structures. The merged features have a higher height percentage compared to the overall height, allowing for a larger landing range for source/drain contact features. This reduces the resistance between the source/drain feature and the contact features. Additionally, some merged features may contain voids within the merged portion.

Original Abstract Submitted

Embodiments of the present disclosure provide methods for forming merged source/drain features from two or more fin structures. The merged source/drain features according to the present disclosure have a merged portion with an increased height percentage over the overall height of the source/drain feature. The increase height percentage provides an increased landing range for source/drain contact features, therefore, reducing the connection resistance between the source/drain feature and the source/drain contact features. In some embodiments, the emerged source/drain features include one or more voids formed within the merged portion.