SEMICONDUCTOR BURIED LAYER: abstract simplified (18203849)

• This abstract for appeared for patent application number 18203849 Titled 'SEMICONDUCTOR BURIED LAYER'

Simplified Explanation

This abstract describes a method used in semiconductor manufacturing. A mask is placed on a semiconductor layer or substrate, and the area underneath the mask is etched to create a cavity. The cavity is then lined to create a containment structure. The containment structure is filled with a base semiconductor material, and once filled, the mask is removed. Finally, at least one semiconductor device is created within or on the base semiconductor material inside the containment structure.

Original Abstract Submitted

In a semiconductor manufacturing method, a mask is disposed on a semiconductor layer or semiconductor substrate. The semiconductor layer or semiconductor substrate is etched in an area delineated by the mask to form a cavity. With the mask disposed on the semiconductor layer or semiconductor substrate, the cavity is lined to form a containment structure. With the mask disposed on the semiconductor layer or semiconductor substrate, the containment structure is filled with a base semiconductor material. After filling the containment structure with the base semiconductor material, the mask is removed. At least one semiconductor device is fabricated in and/or on the base semiconductor material deposited in the containment structure.