Robert bosch gmbh (20240136236). VERTICAL SEMICONDUCTOR COMPONENT AND METHOD FOR GENERATING AN ABRUPT END POINT DETECTION SIGNAL DURING THE PRODUCTION OF SUCH A VERTICAL SEMICONDUCTOR COMPONENT simplified abstract
Contents
- 1 VERTICAL SEMICONDUCTOR COMPONENT AND METHOD FOR GENERATING AN ABRUPT END POINT DETECTION SIGNAL DURING THE PRODUCTION OF SUCH A VERTICAL SEMICONDUCTOR COMPONENT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL SEMICONDUCTOR COMPONENT AND METHOD FOR GENERATING AN ABRUPT END POINT DETECTION SIGNAL DURING THE PRODUCTION OF SUCH A VERTICAL SEMICONDUCTOR COMPONENT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
VERTICAL SEMICONDUCTOR COMPONENT AND METHOD FOR GENERATING AN ABRUPT END POINT DETECTION SIGNAL DURING THE PRODUCTION OF SUCH A VERTICAL SEMICONDUCTOR COMPONENT
Organization Name
Inventor(s)
Christian Huber of Ludwigsburg DE (US)
Roland Puesche of Rommelsbach DE (US)
VERTICAL SEMICONDUCTOR COMPONENT AND METHOD FOR GENERATING AN ABRUPT END POINT DETECTION SIGNAL DURING THE PRODUCTION OF SUCH A VERTICAL SEMICONDUCTOR COMPONENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136236 titled 'VERTICAL SEMICONDUCTOR COMPONENT AND METHOD FOR GENERATING AN ABRUPT END POINT DETECTION SIGNAL DURING THE PRODUCTION OF SUCH A VERTICAL SEMICONDUCTOR COMPONENT
Simplified Explanation
The abstract describes a vertical semiconductor component designed for generating an abrupt end point detection signal. The component includes a semiconductor substrate with front and rear faces, a buffer layer with second chemical elements on the front face, a semiconductor contact layer with an active region, and an etching control layer with third chemical elements between the buffer layer and the semiconductor contact layer.
- Semiconductor substrate with front and rear faces
- Buffer layer with second chemical elements on the front face
- Semiconductor contact layer with active region
- Etching control layer with third chemical elements
Potential Applications
The technology could be used in semiconductor manufacturing processes where precise end point detection is crucial, such as in etching processes.
Problems Solved
This technology solves the problem of accurately detecting the end point of semiconductor manufacturing processes, ensuring precise control and efficiency.
Benefits
The vertical semiconductor component provides a reliable and accurate end point detection signal, improving the quality and yield of semiconductor products.
Potential Commercial Applications
The technology could be applied in the semiconductor industry for various processes requiring precise end point detection, potentially increasing productivity and reducing waste.
Possible Prior Art
Prior art in the field of semiconductor manufacturing may include similar components designed for end point detection in various processes.
Unanswered Questions
How does this technology compare to existing end point detection methods in terms of accuracy and efficiency?
This article does not provide a direct comparison with existing end point detection methods, leaving the reader to wonder about the advantages of this technology over current practices.
What are the potential limitations or challenges in implementing this technology in semiconductor manufacturing processes?
The article does not address any potential limitations or challenges that may arise when implementing this technology, leaving room for further exploration and analysis in this area.
Original Abstract Submitted
a vertical semiconductor component for generating an abrupt end point detection signal. the vertical semiconductor component includes: a semiconductor substrate which has a front face and a rear face, the front face being opposite the rear face, and the semiconductor substrate having first chemical elements; a buffer layer which is arranged on the front face of the semiconductor substrate, the buffer layer having second chemical elements; and a semiconductor contact layer which is arranged on the buffer layer, an active region of the vertical semiconductor component being arranged on the semiconductor contact layer. an etching control layer is arranged between the buffer layer and the semiconductor contact layer, the etching control layer having at least one third chemical element which differs from the first chemical elements and the second chemical elements.
