Qualcomm incorporated (20240097619). Reducing Parasitic Capacitance simplified abstract

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Reducing Parasitic Capacitance

Organization Name

qualcomm incorporated

Inventor(s)

Ranadeep Dutta of Del Mar CA (US)

Abdellatif Bellaouar of Richardson TX (US)

Chuan-Cheng Cheng of San Diego CA (US)

Reducing Parasitic Capacitance - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240097619 titled 'Reducing Parasitic Capacitance

Simplified Explanation

The patent application describes an apparatus for reducing parasitic capacitance using a differential cascode configuration in an amplifier.

  • The apparatus includes an amplifier with a first transistor operating as an input stage and a second transistor operating as a cascode stage.
  • Both transistors have uniform doping types across their channel terminal regions.
  • The first and second transistors have electrical contacts abutting their channel terminal regions, while the second transistor forms a floating region at a floating node.
  • The number of electrical contacts abutting the channel terminal regions is greater than those abutting the surface of the floating region.

Potential Applications

This technology could be applied in high-frequency communication systems, audio amplifiers, and sensor interfaces.

Problems Solved

This technology helps reduce parasitic capacitance, which can improve the performance and efficiency of electronic devices.

Benefits

The reduced parasitic capacitance can lead to better signal integrity, higher bandwidth, and lower power consumption in electronic circuits.

Potential Commercial Applications

Commercial applications could include mobile devices, wireless communication systems, and medical devices.

Possible Prior Art

One possible prior art could be the use of cascode configurations in amplifiers to improve performance and reduce parasitic capacitance.

Unanswered Questions

How does this technology compare to other methods of reducing parasitic capacitance in amplifiers?

This article does not provide a comparison with other techniques or technologies used for reducing parasitic capacitance.

What are the specific performance improvements achieved by implementing this apparatus in electronic devices?

The article does not detail the specific performance enhancements or metrics resulting from the implementation of this apparatus.


Original Abstract Submitted

an apparatus is disclosed for reducing parasitic capacitance. in an example aspect, an apparatus includes an amplifier having a differential cascode configuration. each stack of the amplifier includes a first transistor configured to operate as an input stage and a second transistor configured to operate as a cascode stage. the first and second transistors each include two channel terminal regions having a doping type that is uniform across the two channel terminal regions. surfaces of first channel terminal regions of the first and second transistors abut a first and second quantity of electrical contacts, respectively. second channel terminal regions of the first and second transistors form a floating region at a floating node. each of the first quantity of electrical contacts and the second quantity of electrical contacts is greater than a third quantity of electrical contacts abutting a surface of the floating region.