Qualcomm incorporated (20240096698). SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS simplified abstract
Contents
- 1 SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS
Organization Name
Inventor(s)
Junjing Bao of San Diego CA (US)
Chih-Sung Yang of Hsinchu City (TW)
Haining Yang of San Diego CA (US)
SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096698 titled 'SELECTIVE TUNGSTEN CONTACT PLUGS ABOVE GATE AND SOURCE/DRAIN CONTACTS
Simplified Explanation
The patent application describes a transistor with a metal gate, dielectric layer, metal cap, and gate contact made of tungsten.
- The transistor includes a gate structure with a metal gate surrounded by a dielectric layer.
- A metal cap covers part of the metal gate not surrounded by the dielectric layer.
- The gate contact is made of tungsten and is in direct contact with the metal cap.
Potential Applications
This technology could be applied in the semiconductor industry for the development of advanced transistors with improved performance and reliability.
Problems Solved
1. Enhanced gate control in transistors. 2. Improved contact resistance between the gate and source/drain regions.
Benefits
1. Increased efficiency and speed of electronic devices. 2. Enhanced durability and longevity of transistors.
Potential Commercial Applications
Optimizing Transistor Performance with Tungsten Gate Contacts
Possible Prior Art
Prior art may include patents or publications related to transistor structures with metal gates and tungsten contacts.
Unanswered Questions
How does this technology compare to existing transistor designs in terms of performance and reliability?
This article does not provide a direct comparison with existing transistor designs to evaluate performance and reliability differences.
What are the potential manufacturing challenges associated with implementing this technology on a large scale?
The article does not address the potential manufacturing challenges that may arise when scaling up the production of transistors with tungsten gate contacts.
Original Abstract Submitted
in an aspect, a transistor comprises a gate structure having a metal gate, a dielectric layer at least partially surrounding the metal gate, a metal cap over a portion of the metal gate that is not surrounded by the dielectric layer, and a gate contact comprising tungsten in direct contact with the metal cap. in another aspect, a transistor comprises source, drain, and channel regions, a gate structure comprising a metal gate between gate spacers above the channel region, and a source or drain (s/d) contact structure. the s/d contact structure comprises an s/d barrier layer above at least a portion of the source or drain region and in direct contact with a gate spacer, and an s/d contact, comprising a first portion above the s/d barrier layer; and a second portion comprising tungsten, above the first portion.
